Vanguard International Semiconductor Corporation

Yu-Chun Ho

Erik S Jeng

Fu-Liang Yang

Chao-Ming Koh

Bi-Ling Chen

Wei-Ray Lin

Ming-Hong Kuo

Tzu-shih Yen

Hung-Yi Luo

Hsu-Li Cheng

Bin Liu

Chun-Hsu Chen

Pei-Wen Li

Hsiang-Wei Tseng

Chih-Ming Kao

Rong-Gen Wu

Shing-Huang Wu

Han-Wen Chang

Yu-Hua Huang

Meng-Chao Cheng

A method of fabricating a semiconductor structure includes providing a semiconductor substrate, forming a trench in the semiconductor substrate, overfilling the trench with a first semiconductor material, wherein the first semiconductor material does not have a dopant, forming a second semiconductor material on the first semiconductor material, wherein the second semiconductor material contains a dopant, and performing a thermal treatment so that the dopant in the second semiconductor material diffuses into the first semiconductor material to form a doped third semiconductor material in the trench.

Semiconductor structures and methods of forming the same

A process for fabricating a DRAM capacitor structure, in which the capacitor upper plate structure is defined during the formation of bit line contact hole opening, and substrate contact hole opening procedure, eliminating the need for a specific upper plate, photolithographic masking procedure, has been developed. The process features isolating a polysilicon upper plate structure, during an isotropic RIE cycle, also creating an undercut polysilicon region, in the contact holes, which are opened simultaneously during the upper plate definition. Subsequent silicon nitride spacers, on the sides of the contact holes, provides insulation between the polysilicon upper plate structure, and bit line, and substrate contact plug structures, now located in the contact holes. The undercut polysilicon regions, allow the formation of thicker silicon nitride spacers, to be formed in this undercut region.

Method of fabricating a capacitor under bit line DRAM structure using contact hole liners

The present invention is a method for improviding an oxide etching process by using a nitrogen-based plasma. An additional nitrogen-based plasma step is used to inhibit or delay the formation of observed residual bubbles during a dry etching process. The method comprises the steps of etching the oxide layer by reactive ion etching and immersing the oxide layer in a nitrogen plasma.

Oxide etching process using nitrogen plasma

The present invention is a method of manufacturing crown shape capacitors for use in DRAM semiconductor memory. The method includes the steps of forming a first polysilicon layer, patterning a photoresist on the first polysilicon layer, etching the first polysilicon layer, using oxygen plasma to strip the photoresist, forming a side wall polymer onto the side walls of the first polysilicon layer, using the side wall polymer as a mask to etch back the first polysilicon layer to form a crown shape structure, removing the side wall polymer, depositing a dielectric layer onto the first polysilicon layer, and depositing a second polysilicon layer onto the dielectric layer.

Method of manufacturing a crown shape capacitor

An etching process is used to etch the polysilicon layer. Then, Polymers are formed on the polysilicon layer after an ash step is performed. An organic layer is formed on the surface of the polysilicon layer, and on the polymers. An anisotropically etch is carried out to etch the organic layer, thereby forming organic side wall spacers on the side walls of the polysilicon layer. The etching is continuously performed to etch the polysilicon layer using the polymers and organic side wall spacers as masks. Next, an ash and a RCA clean procedure are performed to remove the residual polymers and the organic layer. A dielectric layer is then deposited on the surface of the polysilicon. A conductive layer is deposited over the dielectric layer.

Method of forming a crown shape capacitor

The present invention is a method of manufacturing crown shape capacitors in the semiconducter memories. Using a single step etching to farbricate the capacitor in a DRAM cell. The method can form side wall polymers and etching byproductions on the surface of the first polysilicon, using the side wall polymers and the etching byproductions as a mask to form the crown shape capacitors with pillars. Moreover, this present invention can form the crown shape structure and pillars in the same step, the crown shape structure and the pillars increase the surface area of the capacitor. Therefore the present invention will increase the performance of the capacitor.

Method of manufacturing a crown shape capacitor in semiconductor memory

Growing community of inventors

Taipei, Taiwan

Yu-Chun Ho