Tsinghua University

Yu-Chueh Hung

Rong-Ming Ho

Hsiao-Fang Wang

Han-Yu Hsueh

Lung-Yu Chang Chien

Yi-Chun Ling

Edwin L Thomas

Zhi-Hong Xie

Chih-Ying Yang

Po-Ting Chiu

Ishan Prasad

Wei-Ting Hsu

Jing-Cherng Tsai

Ljiljana Fruk

Jing-Yu Lee

Ting-Yu Lin

Hiroshi Jinnai

A nanonetwork with controlled chirality prepared via self-assembly of triblock terpolymers, wherein each of the triblock terpolymers includes a first block, a second block and a third block. The first block is connected to the second block, and the third block is connected to the second block. The first block, the second block and the third block are incompatible. The third block has a homochiral characteristic, and a chirality of the nanonetwork with controlled chirality is determined by the homochiral characteristic.

Nanonetwork with controlled chirality and manufacturing method thereof

An embodiment of this invention discloses a method for producing a network texture and the method comprises the steps of: formation of a porous structure as a template (matrix); formation of two coherent, independent, and separated robust continuous network structures within the matrix by using the matrix as the template; softening or removing the matrix to shift the two continuous network structures, leading to a novel network texture comprising two incoherent continuous network structures.

Networks and method for producing the same

The present invention relates to a write-once and read-many-times memory device and the fabricating method thereof. The structure of the memory device comprises: a substrate, a first electrode, a double helix biopolymer layer and a second electrode, and a plurality of metal nanoparticles are distributed in the double helix biopolymer layer. The first electrode is disposed on the substrate, the double helix biopolymer layer is disposed on the first electrode and the substrate, and the second electrode is disposed on the double helix biopolymer layer. When illuminating, the memory device will produce a low-conductivity state and high-conductivity state for writing data. Later, when a voltage is applied to the first electrode and the second electrode, the data will be read.

Memory device with a double helix biopolymer layer and fabricating method thereof

Growing community of inventors

Hsinchu, Taiwan

Yu-Chueh Hung