United Microelectronics Corp.

Kaohsiung Medical University

Yu-Chih Su

Yao-Jhan Wang

Te-Chang Hsu

Cheng-Pu Chiu

Chih-Yi Wang

Tien-Shan Hsu

Chi-Hsuan Cheng

An-Chi Liu

Chin-Yang Hsieh

Chun-Jen Huang

Nan-Yuan Huang

Che-Hsien Lin

Cheng-Yeh Huang

Kuan-Lin Chen

Tzu-Pin Wang

A manufacturing method of a semiconductor device includes the following steps. A semiconductor substrate with gate structures formed thereon is provided. A source/drain region is formed in the semiconductor substrate and formed between the gate structures. A dielectric layer is formed on the source/drain region and located between the gate structures. An opening penetrating the dielectric layer on the source/drain region is formed. A lower portion of a first conductive structure is formed in the opening. A dielectric spacer is formed on the lower portion and on an inner wall of the opening. An upper portion of the first conductive structure is formed in the opening and on the lower portion. The dielectric spacer surrounds the upper portion of the first conductive structure. The first conductive structure is formed by two steps for forming the dielectric spacer surrounding the upper portion and improving the electrical performance of the semiconductor device.

Manufacturing method of semiconductor device including conductive structure

Semiconductor device including conductive structure and manufacturing method thereof

A semiconductor device and a method of forming the same, the semiconductor device includes a first and a second fin structures, a first, a second and a third isolation structures, and a first and a second gate structures. The first and second fin structures are disposed in a substrate. The first isolation structure is disposed in the substrate and surrounds the first and second fin structures. The second isolation structure is disposed in the first fin structure, and a top surface of the second isolation structure is leveled with a top surface of the first and second fin structures. The third isolation structure is disposed in the second fin shaped structure, and a top surface of the third isolation structure is lower than the top surface of the first and second fin structures. The first and second gate structures are disposed on the second and third isolation structures, respectively.

Method of forming semiconductor device

A semiconductor structure includes a substrate, a plurality of fin shaped structures, a trench, and a first bump. The substrate has a base, and the fin shaped structures protrude from the base. The trench is recessed from the base of the substrate. The first bump is disposed within the trench and protrudes from a bottom surface of the trench. A width of the first bump is larger than a width of each of the fin shaped structures.

Semiconductor structure with a bump having a width larger than a width of fin shaped structures and manufacturing method thereof

Semiconductor device and method of forming the same

A method of fabricating fins includes providing a silicon substrate. The silicon substrate is etched to form numerous fin elements. A surface of each of the fin elements is silicon. Etch residues are formed on the fin elements after the silicon substrate is etched. After that, a flush step is performed on the fin elements by flushing the surface of each of the fin elements with fluorocarbons. The etch residues on the fin elements are removed by the flush step. After the flush step, a strip step is performed on the fin elements by treating the surface of each of the fin elements with oxygen plasma.

Method of fabricating fins including removing dummy fins after fluorocarbon flush step and oxygen clean step

A semiconductor structure includes a substrate, a plurality of fin shaped structures, a trench, and a first bump. The substrate has a base, and the fin shaped structures protrude from the base. The trench is recessed from the base of the substrate. The first bump is disposed within the trench and protrudes from a bottom surface of the trench. A topmost portion of the first bump is lower than the base, and a width of the first bump is larger than a width of each of the fin shaped structures.

Semiconductor structure having a bump lower than a substrate base and a width of the bump larger than a width of fin shaped structures, and manufacturing method thereof

The present invention discloses a method of harnessing versatile phosphoramidation reactions to regioselectively link a group of alkynyl-/azido-containing compounds to post-synthetic nucleic acids primed with phosphate at the 5' termini. The method includes steps of: (a) monophosphoramidating HN(CH)NHto the 5&#x2032; end of the nucleic acid to form an intermediate 1 where n is an integer from 2 to 6, and the intermediate 1 has a formula of: (b) amidating the free &#x2014;NHgroup of the intermediate 1 with to form an intermediate 2; and (c) reacting the terminal &#x2014;Ngroup of the intermediate 2 with 1-{3-{[4-(2-cyclooctyn-1-ylmethyl)benzoyl]amino}propyl}-4-{2-[4-(dimethylamino)phenyl]ethenyl}pyridinium hexafluorophosphate (Alkyne MegaStokes dye 608) by the SPAAC reaction to form modified nucleic acids. Without the presence of Cu(I), the modified nucleic acids were subjected to azide-alkyne cycloaddition in an aqueous solution to obtain various nucleic acid conjugates with a high yield.

Reagents for universal site-specific labeling and modifications of nucleic acids

Growing community of inventors

Tainan, Taiwan

Yu-Chih Su