National Yang Ming Chiao Tung University

Yu-Chiang Chao

Hsin-Fei Meng

Sheng-Fu Horng

Hsiao-Wen Zan

Ming-Zhi Dai

Wu-Wei Tsai

Chih-Yu Chang

Cheng-Chung Chang

Chun-Yu Chen

Chien-Cheng Liu

Wei-Jen Lai

Yu-Fan Chang

Sheng-Fu Hong

Mei-Peng Liou

Qian-Wei Lin

Hsiao-Tso Su

Chiung-Wen Chang

Hsin- Fei Meng

Wen-Hsing Liu

Jan-Hao Li

An organic light-emitting device includes a first electrode layer, an emission layer, an electron transporting layer, an electron injection layer, and a second electrode layer sequentially formed from bottom to top. The emission layer includes a guest light-emitting material, a first phenyl phosphine oxide derivative and a hole transporting material. The electron transporting layer includes a second phenyl phosphine oxide derivative and a third phenyl phosphine oxide derivative different from the second phenyl phosphine oxide derivative. One of the second phenyl phosphine oxide derivative and the third phenyl phosphine oxide derivative is identical to the first phenyl phosphine oxide derivative. The electron injection layer includes an alkaline metal compound.

Organic light-emitting device

A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.

Vertical electro-optical component and method of fabricating the same

The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.

Method for forming vertical type sensor

Vertical type sensor

A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.

Pressure detector and pressure detector array

The invention provides a label-free sensor that includes a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and spaced away from the first electrode, and a semiconductor layer formed on the substrate and being in contact with the first electrode and the second electrode. The semiconductor layer has a plurality of probe groups bonded to the semiconductor layer by functionalization, for sensing a coupling-specific substance having bonding specificity with the probe groups. The semiconductor layer is bonded with the probe groups, and the detection of detected object is performed in an instant, quick, rapid, and sensitive manner by measuring variation in electric current, avoiding the use of fluorescent reading equipment for reading fluorescent signals.

Label-free sensor

A vertical organic light emitting transistor assembly and a horizontal organic light emitting transistor assembly are provided. The vertical organic light emitting transistor assembly comprises a first/second vertical transistor and a first/second organic light emitting diode perpendicularly integrated with the first/second vertical transistor, respectively. The horizontal organic light emitting transistor assembly comprises a substrate, a third vertical transistor and a third organic light emitting diode. The third vertical transistor and the third organic light emitting diode are arranged abreast on the substrate. By integrating the organic light emitting diode and the vertical transistor into a unitary electronic element, the vertical transistor can efficiently drive the organic light emitting diode so that the organic light emitting transistor assembly can overcome limitations caused by existing manufacturing processes and adapt to extensive applications.

Vertical organic light emitting transistor assembly and horizontal organic light emitting transistor assembly

A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.

Vertical organic transistor

Growing community of inventors

Hsinchu, Taiwan

Yu-Chiang Chao