Soraa Laser Diode, Inc.

Soraa, Inc.

Kyocera Sld Laser, Inc.

Yu-Chia Chang

James W Raring

Mathew C Schmidt

Daniel F Feezell

Rajat Sharma

Nicholas J Pfister

Christiane Elsass

Nick Pfister

Drew Felker

Christiane Poblenz

Matt Schmidt

A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

Method and system for providing directional light sources with broad spectrum

A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescence mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about &#x2212;1 degree towards (000-1) and less than about +/&#x2212;0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

Optical device structure using GaN substrates for laser applications

A method and device for emitting electromagnetic radiation using semipolar or nonpolar gallium containing substrates is described where the backside of the substrate includes multiple scribes that reduce stray light leaking.

Laser diodes with scribe structures

Method and system for providing bidirectional light sources with broad spectrum

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Fremont, CA, United States of America

Yu-Chia Chang