Taiwan Semiconductor Manufacturing Comp. Ltd.

Inventec Corp.

Inventec Appliances Corporation

United Microelectronics Corp.

National Yang Ming Chiao Tung University

Body Organ Biomedical Corp.

Powerchip Semiconductor Corporation

Yu-Chi Lin

Yi-Wei Chiu

Chin-Hsing Lin

Hung Jui Chang

Shih-Hsuan Wang

Chih-Teng Liao

Beniz Wang

Yu Lun Ke

Chao-Cheng Chen

Huai-Tei Yang

Hsiao-Wen Zan

Lun-Kuang Tan

Hsin-Fei Meng

Wei-Jen Lo

Yu-Wei Chang

Yu-Wei Kuo

Yun-Ting Hsu

Yi-Tsang Hsieh

Yu-Ting Weng

Horng-Ji Lai

Hsien-Chung Huang

Min-Chang Huang

Yu-Nung Mao

Shang-Yu Yu

Li-Hsin Yang

Ting-Wei Tung

Yi-Chu Wu

Jui-Min Ho

Mei-Ju Kuo

Ta-Wei Su

Chiung-Wen Hsu

Ting-Chung Wang

Kuan-Hao Huang

Yu-Lun Ke

Chih-Hao Chen

Cha-Hsin Chao

Cheng-Sheng Huang

Kun-Jung Wu

Ching-Pei Lin

Paul P Chang

Jeng-Ho Wang

Hsin-Yi Lu

Hung-Jui Chang

Chung Chuan Huang

Yu-Hsi Tang

Che-En Tsai

Kuo-Yao Weng

Ming-Wei Chen

Ju-Hsin Chi

Wei-Hong Zhu

Pin-Yuan Yu

Yung-Chih Lin

Chi-Yung Hsieh

Chih-Chung Wu

Chi-Fang Huang

Liang Yu Chen

Yu-Shan Hsu

Yu Hsi Tang

Some implementations described herein provide techniques and apparatuses for improving a uniformity of a flow of a gas across a semiconductor substrate in an etch tool. The etch tool includes an exhaust port located at a bottom center of a chamber of the etch tool. The etch tool further includes a flow-control subsystem that includes an impeller and a thermal component. As a result of the flow-control subsystem varying a rotational velocity of the impeller, and/or an amount of heat transferred from the thermal component, the uniformity of the flow of the gas across the semiconductor substrate may be improved. In this way, a uniformity of an etching rate may be increased and contamination defects due to a clustering of particulates may be decreased, resulting in an increase in a yield of semiconductor product fabricated using the etch tool.

Semiconductor processing tool and methods of operation

A device includes a substrate, a first fin, a second fin, a first isolation structure, a second isolation structure, and a gate structure. The first fin extends from a p-type region of the substrate. The second fin extends from an n-type region of the substrate. The first isolation structure is over the p-type region and adjacent to the first fin. The first isolation structure has a bottom surface and opposite first and second sidewalls connected to the bottom surface, a first round corner is between the bottom surface and the first sidewall of the first isolation structure, and the first sidewall is substantially parallel to the second sidewall. The second isolation structure is over the n-type region and adjacent to the first fin. The first isolation structure is deeper than the second isolation structure. The gate structure is over the first isolation structure and covering the first fin.

Etch profile control of isolation trench

A semiconductor manufacturing apparatus for performing a process is disclosed. An apparatus includes a chamber configured to receive a wafer for an etching process; a conductive focus ring disposed within the chamber and configured to focus an electric field to control an etch direction of the etching process; and an insulative cover ring disposed within the chamber, wherein the insulative cover ring is configured to modify the electric field, wherein the insulative cover ring has an inner annular insulative portion and outer annular insulative portion, and wherein a gap is defined between the inner annular insulative portion and the outer annular insulative portion.

Plasma processing apparatus and method

A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.

Gas sensor

A method for manufacturing a semiconductor structure includes disposing a wafer in a processing chamber, in which the wafer is laterally surrounded by a focus ring. A plasma is formed in the processing chamber to process the wafer. A thickness of the focus ring is detected. A plasma direction of the plasma over a peripheral region of the wafer is adjusted according to the thickness of the focus ring.

Plasma processing method for manufacturing semiconductor structure

A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.

Etching apparatus and methods of cleaning thereof

A command script editing method, a command script editor and a graphic user interface are provided. The command script editing method includes the following steps. The command node is edited according to at least one inputting action or at least one image identifying action performed on the operation frame when the command script editor is at an image editing mode. The command node is edited according to a setting content of at least one process action when the command script editor is at a process editing mode.

Command script editing method, command script editor and graphic user interface

A method of fabricating a thin film with a varying thickness includes the steps of providing a shadow mask with an opening, providing a carrier plate, arranging a substrate on the carrier plate, and coating the substrate through the opening whilst rotating the carrier plate relative to the shadow mask. A plurality of zones of the substrates is swept and exposed from arcuate portions of the opening per each turn by a plurality of predetermined exposure times, respectively. The varying thickness of the thin film corresponds to variation of the predetermined exposure times.

Method of fabricating thin film with varying thickness

An automatic adjusting method for equipment and a smart adjusting device using the same are provided. The automatic adjusting method of the equipment includes the following steps. A template frame from the equipment is obtained in an initial period. Several clear frames are obtained in one window period. Each of the template frame and the clear frame has a pixel variation. The pixel variation of the template frame is the largest in the initial period. The pixel variation of each of the clear frame is greater than a threshold. Each of the clear frame is compared with the template frame to obtain an offset. A statistical value of the offsets is calculated. A parameter of the equipment is adjusted to reduce the statistical value.

Automatic adjusting method for equipment and smart adjusting device using the same

The present disclosure describes an exemplary etch process in a reactor that includes a shower head and an electrostatic chuck configured to receive a radio frequency (RF) power. The shower head includes a top plate and a bottom plate with one or more gas channels that receive incoming gases. The method can include (i) rotating the top plate or the bottom plate of the shower head to a first position to allow a gas to flow through the shower head; (ii) performing a surface modification cycle that includes: applying a negative direct current (DC) bias voltage to the shower head, applying an RF power signal to the wafer chuck; and (iii) performing an etching cycle that includes: removing the negative DC bias voltage from the shower head and lowering the RF power signal applied to the wafer chuck.

Etch process with rotatable shower head

A method includes mounting a wafer on a chuck disposed within a chamber of an etching system, the wafer being encircled by a focus ring. While etching portions of the wafer, an etch direction is adjusted to a first desired etch direction by adjusting a vertical position of the focus ring relative to the wafer to a first desired vertical position. While etching portions of the wafer, the etch direction is adjusted to a second desired etch direction by adjusting the vertical position of the focus ring relative to the wafer to a second desired vertical position. The second desired vertical position is different from the first desired vertical position. The second desired etch direction is different from the first desired etch direction.

Focus ring for plasma etcher

A semiconductor manufacturing method and semiconductor manufacturing tool for performing the same are disclosed. The semiconductor manufacturing tool includes a plasma chamber, a mounting platform disposed within the plasma chamber, a focus ring disposed within the plasma chamber, and at least one actuator mechanically coupled to the focus ring and configured to move the focus ring vertically. The actuator is configured to move the focus ring vertically when a plasma is present in the plasma chamber.

Moving focus ring for plasma etcher

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Taipei, Taiwan

Yu-Chi Lin