Chunghwa Picture Tubes, Ltd.

Industrial Technology Research Institute

Au Optronics Corporation

Hannstar Display Corporation

Chi Mei Optoelectronics Corporation

Toppoly Optoelectronics Corporation

Quanta Display Inc.

Taiwan Tft Lcd Association

Delta Electronics, Inc.

Asustek Computer Inc.

Pegatron Corporation

Yu-chi Lee

Po-Hsiu Shih

Shyh-Ming Chang

Pao-Yun Tang

Su-Yu Fang

Cheng-Chung Chen

Chi-Shen Lee

Shuo-Wei Liang

Chai-Yuan Sheu

Chien-Wei Wu

Chia-Hsiang Chen

Yu-Chang Sun

Yi-Hsun Huang

Te-Ming Chu

Cheng-Hsing Chen

Ching-Ho Chou

Shyuan-Jeng Ho

Hung-Jen Chu

Jen-Huang Jeng

Ching-sung Yeh

Hong-Tian Yu

San-Jung Lee

This invention discloses a portable computer capable of performing a digital photo frame function under a main-power-off state. The portable computer includes a base, a display device, an image capturing device, an image capturing switch, and a processor. The display device includes a frame pivotally connected to the base. The image capturing device and the image capturing switch are disposed at the frame. The image capturing switch is operated to output a first request signal to the processor. In response to the first request signal, the processor drive the image capturing device to capture a first image under the main-power-off state, and the processor instantly displays the first image on the display device under the main-power-off state.

Portable computer capable of performing digital photo frame function under main-power-off state

A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

Manufacturing method for a TFT electrode for preventing metal layer diffusion

A height adjusting mechanism suitable for a keyboard is provided, and the keyboard is placed on a flat surface and has a casing. The height adjusting mechanism includes a fixing piece, a cylinder, a first gear and a second gear. The fixing piece is disposed on the casing and has a container and at least a supporting part that extends into the container. The cylinder has at least a spiral guide on its sidewall and the supporting part slides along the spiral guide when the cylinder rotates. In addition, the first gear is assembled to the cylinder so that the first gear and the cylinder can rotate simultaneously. The second gear and the first gear are meshed with each other so that the second gear can drive and rotate the first gear to adjust the relative distance between the casing and the bottom of the cylinder.

Height adjusting mechanism

The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

Structure of TFT electrode for preventing metal layer diffusion and manufacturing method therefor

A one drop fill (ODF) liquid crystal display panel has a CF substrate, a TFT substrate, and a liquid crystal layer positioned between the CF substrate and the TFT substrate. The TFT substrate further has a pixel array region positioned in the center part of the TFT substrate, a sealant region position in the periphery region of the TFT substrate, a light-shielding pattern positioned on the sealant region, and a sealant pattern positioned corresponding to the sealant region between the CF substrate and the TFT substrate for assembling the two substrates.

One drop fill LCD panel having light-shielding pattern with first and second metal patterns

The present invention discloses a frequency-modulated dimming control system of a discharge lamp. The frequency-modulated dimming control system of a discharge lamp includes including a voltage regulator having a variable output voltage for converting an input voltage into a bus voltage, wherein a level of the bus voltage is a predetermined ratio of the input voltage, for example 10% of the input voltage, and a ballast circuit for driving the discharge lamp by detecting a variation of the bus voltage and then providing a current to the discharge lamp in response to a frequency modulation of the ballast circuit and the variation of the bus voltage so as to control a light intensity of the discharge lamp.

Frequency-modulated dimming control system of discharge lamp

The present invention provides a liquid crystal panel with an isolation wall structure and its producing method. The method comprise: selecting one substrate from two substrates that have been put under alignment process and forming on it a plurality of closing isolation wall structure that is mutual-repulsive to liquid crystal; then forming a close sealant on the substrate, the sealant being located between outer edge of the substrate and the isolation wall structure; and then, combining the two substrates for confining liquid crystal in the isolation wall structure and isolating the liquid crystal from the sealant.

Liquid crystal panel with isolation wall structure and its producing method

A structure of liquid crystal display and manufacture method thereof are described. The liquid crystal display is manufactured by a one drop fill process. The display comprises a first substrate, a second substrate, a conductive pattern layer, a black matrix layer, a liquid crystal layer and an ultraviolet-type seal. The metal pattern layer is made of indium tin oxide and formed on the first substrate. Therefore, the metal pattern layer is a transparent layer allowing the ultraviolet light to pass through. The ultraviolet-type seal is pre-cured by the ultraviolet light from the first substrate direction to the seal, and then cured by a heating process. Hence, the liquid crystal pollution problem is reduced.

Structure of LCD manufactured by one-drop fill technology including a substrate with transparent conductive patterns

A liquid crystal display with separating wall is described. The liquid crystal display is manufactured by a one drop fill process. The display comprises a first substrate, a second substrate, a liquid crystal layer and a seal. The separating wall is formed on the first substrate and around a periphery of the first substrate in a non-display area to block efficiently the liquid crystal from spilling out. The height of the separating wall is close to a cell gap, and therefore the separating wall can utilize a technology of spacer on color filter to produce and adjust height thereof. Hence, the quality of liquid crystal displays can be improved and manufacture cost can be reduced.

Liquid crystal display with separating wall

A tape automated bonding (TAB) process in which a tape-carrier through its finger leads is bonded to composite bumps on an IC chip wherein the composite bumps are constructed by a polymeric material layer and at least one metal layer. The polymeric material layer has a lower rigidity (or a lower Young's modules) than those of the metal layers. Structural damages during the bonding process that is frequently caused by a rigid metal bump is eliminated. The TAB bonding process can be carried out by using either an all-metal lead frame, a plated metal lead frame, or a polymer reinforced metal lead frame. The polymer/metal composite bumps constructed on the IC chip require a smaller bonding force when bonded in a thermal bonder.

Method for tape automated bonding to composite bumps

This invention provides a bonded structure and a method of forming the bonded structure for joining a lead array to the conducting bonding pads of an integrated circuit element. The invention uses an anisotropic conductive film with tape automated bonding to form the bonded structure. The invention also uses integrated circuit elements having composite bumps as input/output pads. The composite bumps comprise a polymer body covered by a conductive metal coating. The invention provides a low cost method of tape automated bonding which uses lower temperature and pressure in the bonding process and provides a bond which is automatically encapsulated after the bonding has been completed. The lower temperature and pressure improve the dimensional stability of the elements of the bonded structure and the automatic encapsulation provides improved reliability.

Composite bump tape automated bonded structure

Composite bump tape automated bonding method and bonded structure

Growing community of inventors

Taipei, Taiwan

Yu-chi Lee