Lam Research Corporation

Yu Cheng

Andrew D Bailey, Iii

Eric A Hudson

Peter K Loewenhardt

Gerardo Delgadino

Kenji Takeshita

Helen H Zhu

Bing Ji

Stephen M Sirard

Bi-Ming Yen

Robert C Hefty

Daniel Le

Maryam Moravej

Hanzhong Xiao

Jiangang Liu

Huiyuan Pei

Jungmin Ko

Youngjin Choi

Vinay V Phoray

Liang Wang

Junwen Huang

A method for forming conductive contacts in a dielectric layer is provided. Partial vias are etched into the dielectric layer through a via mask. Trenches are etched into the dielectric layer through a trench mask, wherein the etching the trenches completes and over etches the vias to widen bottoms of the vias. Tops of the trenches or vias are rounded.

Metal hardmask all in one integrated etch

A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

Method for low-K dielectric etch with reduced damage

In a plasma processing system, a method of minimizing the differences in an etch rate of a photo resist material in different regions of a substrate is disclosed. The method includes introducing the substrate having in sequential order thereon, an underlying layer and the photo-resist layer. The method also includes flowing the etchant gas mixture into a plasma reactor of the plasma processing system, the etchant gas mixture comprising a flow of a fluorine containing gas between about 0.1% and about 10% of the etchant gas mixture. The method further includes striking a plasma from the gas mixture; etching the photo-resist layer with the plasma; and, removing the substrate from the plasma reactor.

Methods and apparatus for the optimization of photo resist etching in a plasma processing system

Growing community of inventors

Fremont, CA, United States of America

Yu Cheng