United Microelectronics Corp.

Yu-Cheng Liao

Tien-Hao Tang

Ping-Chen Chang

Kuan-Cheng Su

Yu-Chun Chen

Ting-Yao Lin

Pei-Shan Tseng

An electrostatic discharge (ESD) protection circuit has a first power node, a second power node, an ESD detect circuit, an ESD device and a voltage controlled switch. The ESD detect circuit is coupled between the first power node and the second power node for detecting an ESD current to output a control signal at a output terminal of the ESD detect circuit. The ESD device is coupled between the first power node and the second power node for leaking the ESD current. The voltage controlled switch is used to couple a body of the ESD device to the second power node according to at least a voltage level of the control signal.

Electrostatic discharge protection circuit for bypassing an ESD current

A layout structure is provided. The layout structure includes a substrate, a gate conductive layer, a first doped region having a first conductivity, a second doped region having the first conductivity, and a third doped region having a second conductivity. The gate conductive layer is formed on the substrate. The first doped region the second doped region are formed in the substrate and located at two sides of the gate conductive layer. The third doped region is formed in the substrate and adjacent to the second doped region. The third doped region and the second doped region form a diode. The gate conductive layer, the first doped region, and the third doped region are connected to ground, and the second doped region is connected to an input/output pad.

Layout structure for electrostatic discharge protection

A semiconductor structure suitable for ESD protection application is provided. The semiconductor structure includes a first well, a second well, a third well, a first fin, a second fin, an anode, a cathode and a first doping region. The first well and the second well are disposed in the third well. The first fin is disposed on the first well. The second fin is disposed on the second well. The anode is disposed on the first fin. The cathode is disposed on the second fin. The first doping region is disposed under the first fin, and separates the first fin from the first well. The first well, the second well, the first fin and the second fin have a first doping type. The third well and the first doping region have a second doping type.

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Yunlin County, Taiwan

Yu-Cheng Liao