Industrial Technology Research Institute

Yu-Chen Hsin

Cha-Hsin Lin

Hsin-Han Lee

Shang-Chun Chen

Yu-Sheng Chen

Tzu-Kun Ku

Jeng-Hua Wei

Pei-Jer Tzeng

Ding-Yeong Wang

Shan-Yi Yang

Jui-Chin Chen

Yiu-Hsiang Chang

A magnetic random access memory (MRAM) structure is provided. The MRAM structure includes a first write electrode, a first magnetic tunnel junction (MTJ) stack, a voltage control electrode, a second MTJ stack, and a second write electrode. The first MTJ stack includes a first free layer disposed on the first write electrode, a first tunnel barrier layer disposed on the first free layer, and a first fixed layer disposed on the first tunnel barrier layer. The voltage control electrode is disposed on the first MTJ stack. The second MTJ stack includes a second fixed layer disposed on the voltage control electrode, a second tunnel barrier layer disposed on the second fixed layer, and a second free layer disposed on the second tunnel barrier layer. The second write electrode is disposed on the second MTJ stack.

Magnetic random access memory structure

A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.

Biomolecule magnetic sensor

A structure of an electrochemical unit includes a substrate, a first metal layer disposed on the substrate, and an array of electrochemical cells disposed on the first metal layer. The array of the electrochemical cells includes a plurality of electrochemical cells. Each of the electrochemical cells includes the first metal layer disposed on the substrate, a first electrode disposed on the first metal layer, a polymer layer disposed on the substrate and adjacent to the first metal layer and the first electrode. A second metal layer is disposed on the polymer layer, and a second electrode is disposed on the second metal layer. A pore is constituted between the polymer layers of every the two electrochemical cells. A cavity located above the first electrode is defined between every the two electrochemical cells, wherein the cavity is communicated with the pore.

Structures and manufacture method of electrochemical units

A method for fabricating a semiconductor device is provided. The method includes: providing a first wafer having a first active surface and a first rear surface opposite to the first active surface, the first wafer comprising a first circuit formed therein; providing a second wafer having a second active surface and a second rear surface opposite to the second active surface, the second wafer comprising a second circuit formed therein; bonding the first active surface of the first wafer with the second active surface of the second wafer so as to electrically connecting the first circuit and the second circuit; thinning the second wafer from the second rear surface; and forming at least a conductive through via in the second wafer, wherein the conductive through via is electrically connected to the first circuit through the second circuit.

Semiconductor structure and manufacturing method thereof

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a device layer and a least one conductive post. The substrate includes a first surface, a second surface opposite to the first surface, and at least one through hole penetrating the substrate. The substrate includes a first side wall portion and a second side wall portion at the through hole. The first side wall portion is connected to the first surface and includes a plurality of first scallops. The second side wall portion is connected to the second surface and includes a non-scalloped surface. The device layer is disposed on the second surface, and the second side wall portion of the substrate further extends into the device layer along the non-scalloped surface. The conductive post is disposed in the through hole, wherein the conductive post is electrically connected to the device layer.

Growing community of inventors

Hsinchu County, Taiwan

Yu-Chen Hsin