E Ink Corporation

University System of Maryland

Princeton University

The United States of America, as Represented by the Secretary, Department of Health and Human Services

The United States Government as Represented by the Department of Veterans Affairs

Georgetown University

St. Jude Medical, Inc.

Gpb Scientific, LLC

Yu Chen

Peter T Kazlas

Karl Raymond Amundson

Paul Stephen Drzaic

Andrew P Ritenour

Kevin L Denis

Gregg Michael Duthaler

Nathan R Kane

Guy Danner

Joseph M Jacobson

Joseph M Schmitt

Robert H Austin

James Christopher Sturm

Sigurd Richard Wagner

Curt I Civin

Joanna F Au

Kevin K Lehmann

Cha-Min Tang

Michael Grisham

Joseph D'Silva

Wen-Bin Yan

Peter Andrews

David John Cole

Thomas Joshua Pfefer

Chia-Pin Liang

Ashraf Fouad

Nicholas Woolsey

Jeremiah Wierwille

Hsing-Wen Wang

Jianting Wang

Hyounguk Jang

Described herein are microfluidic devices and methods that can greatly improve cell quality, streamline workflows, and lower costs. Applications include research and clinical diagnostics in cancer, infectious disease, and inflammatory disease, among other disease areas.

On-chip microfluidic processing of particles

Novel biophotonic phantoms are provided herein that can accurately mimic the optical properties of living tissue. The disclosed biophotonic phantoms comprise hemoglobin (Hb) in a native conformation that is distributed in a solid polymer matrix. Methods of producing the disclosed biophotonic phantoms are also provided. The biophotonic phantoms can be used, for example, to calibrate or test an optical imaging system, such as a near infrared spectroscopy imaging system.

Solid hemoglobin-polymer biophotonic phantoms and their use

A kidney viability assessment system (KVAS) is disclosed which provides objective and reliable tests to assess the viability of transplant or donor kidneys in vivo and predict their post-transplant outcomes. KVAS includes an optical device augmented by an intelligent algorithm that can evaluate the viability or quality of the donor kidney in a real-time, non-invasive way. In particular, it includes a handheld optical coherence tomography (OCT) imaging device and at least one processor configured for executing a set of instructions corresponding to an automatic image processing algorithm for quantification of kidney microstructures and functions. Handheld OCT can survey the entire surface of kidney, and the image processing algorithm automatically segments and quantifies the diameter and/or density of the kidney microstructures, blood flows, etc., and quantitative values are displayed in real-time on a display of the KVAS.

Apparatus and methods for non-invasive assessment of transplant kidney viability

A motion sensor applicable to medical procedures includes a source of light with a wavelength bandwidth and an optical detector. A first optical coupler terminates in a first probe tip and couples the light into the first probe tip. A second optical coupler terminates in a second probe tip and directs onto the detector scattered light returning through the second probe tip. A presentation device outputs a signal that indicates motion in a target volume of a sample in a vicinity of the probe tips based on a Doppler shift of the scattered light. The volume depends on coherence distance determined by the bandwidth. In variations, the first and second tips are the same tip, a multimode fiber is included, the bandwidth is between 0.1% and 5% of a center wavelength, or the presentation device is a speaker, or some combination.

Coherence gated doppler motion sensor and medical applications

A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors. The invention also provides a process for forming a diode on a substrate by depositing on the substrate a first conductive layer, and a second patterned conductive layer and a patterned dielectric layer over parts of the first conductive layer, and etching the first conductive layer using the second conductive layer and dielectric layer as an etch mask. Finally, the invention provides a process for driving an impulse-sensitive electro-optic display.

Processes for forming backplanes for electro-optic displays

An electro-optic display comprises a substrate (), non-linear devices () disposed substantially in one plane on the substrate (), pixel electrodes () connected to the non-linear devices (), an electro-optic medium () and a common electrode () on the opposed side of the electro-optic medium () from the pixel electrodes (). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices ().

Field effect transistor

A backplane for use in an electro-optic display comprises a patterned metal foil having a plurality of apertures extending therethrough, coated on at least side with an insulating polymeric material and having a plurality of thin film electronic devices provided on the insulating polymeric material.

Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough

A thin-film transistor includes a gate electrode having first and second gate electrode edges on opposed sides, and a drain electrode having a first edge that overlaps the first gate electrode edge, and a second edge that overlaps the second gate electrode edge. A diode array is fabricated by successive deposition of a conductive layer, a doped semiconductor layer and an undoped semiconductor layer adjacent to the substrate. A display pixel unit provides reduced capacitative coupling between a pixel electrode and a source line. The source line includes an extension that provides a source for the transistor. A patterned conductive portion is disposed adjacent to the source line. Another display pixel unit provides reduced pixel electrode voltage shifts using a source line and a balance line.

Backplanes for display applications, and components for use therein

Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300&#xb0; C. during the processes used to form the transistors, thus allowing the formation of high quality silicon semiconductor layers. The substrate also has a low coefficient of thermal expansion, which closely matches that of silicon, thus reducing any tendency for a silicon layer to crack or delaminate.

Process for fabricating thin film transistors

A device and method for quantifying an impurity in an input gas stream. The device and method employ a catalyst to convert the impurity to a detectable species in an output gas stream, and the concentration of the detectable species is then measured by means of a detector.

Analytical sensitivity enhancement by catalytic transformation

Electro-optic displays, and components for use therein

A display pixel unit provides reduced capacitative coupling between a pixel electrode and a source line. The unit includes a transistor, the pixel electrode, and the source line. The source line includes an extension that provides a source for the transistor. A patterned conductive portion is disposed adjacent to the source line.

A thin-film transistor array comprises at least first and second transistors. Each transistor comprises a source electrode, a drain electrode a semiconductor electrode, a gate electrode, and a semiconductor layer. The semiconductor layer is continuous between the first and second transistors. The semiconductor layer is preferably unpatterned. In various display applications, the geometry of the transistors is selected to provide acceptable leakage currents. In a preferred embodiment, the transistor array is employed in an encapsulated electrophoretic display.

Minimally-patterned semiconductor devices for display applications

Growing community of inventors

Milpitas, CA, United States of America

Yu Chen