Young Optics Inc.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Alpha Networks Inc.

Giga Solar Materials Corporation

Yu-Chen Chang

Chien-Wen Lai

Wei-Szu Lin

Chih-Min Hsiao

Chao-Shun Chen

Chia-Chen Liao

Chien-Hsing Tsai

Ru-Gun Liu

Chih-Ming Lai

Kuan-Lun Cheng

Shih-Ming Chang

Yung-Sung Yen

Chih-Chien Lin

Chih-min Hsiao

Han-Min Chiu

Sheng-Ya Hsu

Yu-Ting Cheng

Chi-Chui Yun

Chia-Chang Lee

Yi-Hsueh Chen

Wei-Shuo Su

Chu-Lung Chao

Ying-Chih Lu

Wen-Jui Huang

Cheng-Hsun Lin

Chong-Chieh Cheng

A method includes bonding a front side surface of a first wafer to a front side of a second wafer; forming a bonding material on a periphery of the first wafer and a periphery of the second wafer; performing a thinning process on the first wafer from a back side surface of the first wafer; after performing the thinning process, performing a trimming process from the back side surface of the first wafer to remove a first portion of the bonding material and partially trim down the periphery of the second wafer from a front side surface of the second wafer.

Stacked wafer structure and method for forming the same

A method for forming a patterned mask layer is provided. The method includes forming a layer over a substrate. The method includes forming a first strip structure and a second strip structure over the layer. The method includes forming a spacer layer over the first strip structure, the second strip structure, and the layer. The method includes forming a third strip structure and a fourth strip structure between the first strip part and the second strip part. The connecting part is between the third strip structure and the fourth strip structure. The method includes removing the spacer layer. The first strip structure, the second strip structure, the third strip structure, and the fourth strip structure together form a patterned mask layer.

Method for forming patterned mask layer

A method for forming a semiconductor structure includes forming first mandrels over a target layer. The method for forming a semiconductor structure also includes forming a first opening to cut off one of the first mandrels. The method for forming a semiconductor structure also includes forming a spacer layer over the first mandrels. The method for forming a semiconductor structure also includes forming second mandrels over the spacer layer and between the first mandrels. The method for forming a semiconductor structure also includes forming a second opening to cut off one of the second mandrels. The method for forming a semiconductor structure also includes etching the spacer layer. The method for forming a semiconductor structure also includes etching the target layer.

Method for forming semiconductor structure

A method includes bonding a front side surface of a first wafer to a second wafer; performing a multi-trimming process on the first and second wafers from a back side surface of the first wafer, the multi-trimming process comprising: performing a first trimming step from the back side surface of the first wafer to cut through a periphery of the first wafer; performing a second trimming step on the second wafer to partially cut a periphery of the second wafer to form a first step-like structure; and performing a third trimming step on the second wafer to partially cut the periphery of the second wafer to form a second step-like structure connecting down from the first step-like structure; after performing the multi-trimming process, forming a coating material at least over the periphery of the second wafer.

Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.

Line-end extension method and device

A light path adjustment mechanism includes a bracket, a light valve, a carrier, a first axis, a second axis and an optical plate member. A surface normal of a surface of the light valve crosses the bracket to define an intersection closest to the surface of the light valve, and the bracket has an end point furthest from the intersection measured in the direction of the surface normal. A distance between the intersection and the surface measured in the direction of the surface normal is smaller than a distance between the intersection and the end point measured in the direction of the surface normal.

Light path adjustment mechanism

A light path adjustment mechanism includes a support, a carrier, an optical plate member, a permanent magnet and an electromagnet. The carrier is disposed in the support and connected to the support by a first elastic member and a second elastic member, the first elastic member and the second elastic member are configured to twist substantially about a first axial direction, and the optical plate member is disposed on the carrier. An attractive force or a repulsive force generated between the permanent magnet and the electromagnet acts in a direction substantially perpendicular to the first axial direction, and one end of the carrier is provided with the permanent magnet or the electromagnet.

An optical path adjusting mechanism including a rotating base, an optical element, a coil, a first spring and a second spring is provided. The rotating base includes a first corner and a second corner opposite to the first corner. A first area and a second area are disposed along a line passing through the first corner and the second corner on the rotating base. The optical element is disposed on the rotating base. The coil is disposed around a periphery of the rotating base. One terminal of the first spring is connected to the first area of the rotating base. One terminal of the second spring is connected to the second area of the rotating base.

Optical path adjusting mechanism

A method for forming a semiconductor structure includes forming a hard mask layer over a target layer. The method also includes forming first mandrels over the hard mask layer. The method also includes forming a first opening in the first mandrels. The method also includes depositing a spacer layer over the hard mask layer and the first mandrels. The method also includes depositing a second mandrel material over the spacer layer. The method also includes planarizing the second mandrel material. The method also includes forming a second opening in the second mandrel material. The method also includes patterning and etching the second mandrel material to form second mandrels. The method also includes etching the spacer layer. The method also includes etching the hard mask layer and the target layer.

A method for forming a patterned mask layer is provided. The method includes forming a first layer over a substrate. The method includes forming a first strip structure and a second strip structure over the first layer. The method includes forming a spacer layer conformally covering the first strip structure, the second strip structure, and the first layer. The method includes forming a block structure in the first trench. The method includes removing a first portion of the spacer layer, which is under the first trench and not covered by the block structure, and a second portion of the spacer layer, which is over the first strip structure and the second strip structure. The method includes forming a third strip structure in the second trench and the third trench. The method includes removing the block structure. The method includes removing the spacer layer.

A light path adjustment mechanism includes a carrier, an optical plate member, a support, a base, a first pair of transmission mechanical pieces, and a second pair of transmission mechanical pieces. One side of the support is provided with a first actuator, and one side of the base is provided with a second actuator. The first pair of transmission mechanical pieces are connected between the base and the support, and the second pair of transmission mechanical pieces are connected between the carrier and the support. The first pair of transmission mechanical pieces are entirely disposed on only one side of the carrier.

A lens adjusting mechanism includes a light-valve case, a lens case, one fastener, and a leaf spring assembly. The light-valve case has an emitting opening and a first opening edge, disposed on the peripheral portion of the emitting opening. The lens case has a light-path entrance and a light-path exit. The lens case also has a second opening edge. The second opening edge is disposed on the peripheral portion of the light-path entrance. The fastener is connected between the first opening edge and the second opening edge. The leaf spring assembly has at least one leaf contact. The leaf spring assembly is disposed between the first opening edge and the second opening edge. The leaf contact contacts the first opening edge or the second opening edge. The fastener is used to adjust the distance between the first opening edge and the second opening edge.

Lens adjusting mechanism

An optical path adjusting mechanism including a rotating base, an optical element, a coil, a first spring and a second spring is provided. A first area and a second area are diagonally disposed on the rotating base. The optical element is disposed in the rotating base. The coil is disposed around a periphery of the rotating base. One terminal of the first spring is connected to the first area of the rotating base. One terminal of the second spring is connected to the second area of the rotating base.

A four signal line unit cell is formed on a substrate using a combination of an extreme ultraviolet photolithography process and one or more self aligned deposition processes. The photolithography process and the self aligned deposition processes result in spacers on a hard mask above the substrate. The spacers define a pattern of signal lines to be formed on the substrate for a unit cell. The photolithography process and self aligned deposition processes result in signal lines having a critical dimension much smaller than features that can be defined by the extreme ultraviolet photolithography process.

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Hsinchu, Taiwan

Yu-Chen Chang