Taiwan Semiconductor Manufacturing Comp. Ltd.

Mediatek Corporation

Powerchip Semiconductor Manufacturing Corporation

Powerchip Technology Corporation

Yu-An Chen

Chih-Yuan Ting

Shih-Ping Lee

Yen-Liang Chen

Chun-Hsien Peng

Po-Yi Wu

Chun-Wei Yang

Bo-An Tsai

Ying-Chou Shih

Chen-Tso Han

Hsiu-Wen Huang

Shih-Siang Chen

Chuan-Hua Chang

I-Chang Lee

Yi-Nung Lin

An interconnect structure, along with methods of forming such, are described. In some embodiments, the method includes forming a first dielectric layer over one or more devices, forming a first conductive feature in the first dielectric layer, and forming two dielectric features over the first dielectric layer and the first conductive feature. At least one of the two dielectric features has a first width, and each dielectric feature includes a first low-k dielectric layer, an oxide layer, and a first etch stop layer. The method further includes forming a second conductive feature between the two dielectric features, and the second conductive feature has a second width substantially the same as the first width.

Interconnect structure and methods of forming the same

A memory structure including first and second transistors, an isolation structure and a capacitor and a manufacturing method thereof are provided. The first and second transistors are disposed on the substrate. The isolation structure is disposed in the substrate between the first and second transistors. The capacitor is disposed between the first and second transistors. The capacitor includes a body portion and first and second extension portions. The first and second extensions are extended from the body portion into the substrate at two sides of the isolation structure and connected to the source/drain regions of the first and the second transistors, respectively. The widths of first and second extension portions are decreased downward from a top surface of the isolation structure.

Memory structure having transistors and capacitor and manufacturing method thereof

An integrated circuit (IC) is provided. The IC includes an RF transmitter configured to generate an RF signal in response to a command signal from test equipment; an RF receiver configured to generate an evaluation signal according to the RF signal, and report the evaluation signal to the test equipment, so that the test equipment performs a test analysis on the evaluation signal to determine a test result, wherein the test equipment is external to the IC.

RF testing system

An image sensor includes a semiconductor substrate with at least one recess disposed on its surface and in the photosensitive area defined on the surface of the semiconductor substrate, a first-conductivity-type doped region disposed in the semiconductor substrate and in the photosensitive area, and a second-conductivity-type doped region disposed on the surface of the first-conductivity-type doped region and on the surface of the recess. A photosensitive device of the image sensor is formed of the first-conductivity-type doped region and the second-conductivity-type doped region.

Image sensor and related fabrication method

Growing community of inventors

Hsinchu, Taiwan

Yu-An Chen