Hitachi, Ltd.

Yozo Kanda

Masatoshi Migitaka

Kikuji Sato

Michiyoshi Maki

A semiconductor Hall element consists of a substantially rectangular main island and at least one small island of semiconductor material, one conductivity type disposed in an epitaxial semiconductor layer grown on a single crystal semiconductor substrate of the opposite conductivity type. In the main island, a pair of highly doped elongated current terminal regions of the one conductivity type are disposed, so that they are near and substantially parallel to a pair of sides of the main island, which are opposite to each other. At least a highly doped Hall signal voltage terminal semiconductor region of the one conductivity type is disposed in the small island. The Hall signal voltage terminal region has a protrusion having a small cross section, the extremity of which is slightly beyond one side of the main island which is perpendicular to the current terminal regions.

Semiconductor Hall element

A Hall element comprises a thin plate of n-type Si, the face of which accords with a {110} atomic plane, wherein the direction from one current electrode to the other current electrode is substantially &lt;100&gt; or &lt;110&gt; crystalline direction to which the direction from one Hall voltage electrode to the other Hall voltage electrode is substantially normal. This Hall element has a very low unbalanced voltage caused by the strain generated during the process of packaging.

Growing community of inventors

Hamamatsu, Japan

Yozo Kanda