Mitsubishi Denki Kabushiki Kaisha

Yousuke Yamamoto

Yoshikazu Tanaka

Mitsuo Ishii

Isao Oshima

Misao Hironaka

Seiichi Nagai

Kazuyoshi Hasegawa

Hideyo Higuchi

Hitoshi Mizuochi

Kazuomi Yoshida

An optical semiconductor device used for optical information processing, such as writing information into and reading information from an optical disk. The optical semiconductor device includes a Si substrate, a light emitting element, and a reflector for reflecting light emitted from the light emitting element in a direction perpendicular to the mounting surface of the Si substrate. The reflector has a reflecting surface inclined by 45.degree. from a bottom face and formed by etching a single crystal of Si.

Integrated semiconductor light generating and detecting device

A method of fabricating a semiconductor light emitting device includes forming an SiON film thinner than 50 nm on a stripe region on a surface of a first semiconductor layer at a first temperature, etching the first semiconductor layer using the SiON film as a mask and forming an optical waveguide including the first semiconductor layer which is left below the SiON film, and selectively growing a second semiconductor layer as a current blocking layer where the first semiconductor layer was removed by etching, using the SiON film as a mask at a second temperature. Therefore, adhesion of the material of the current blocking layer to the surface of the selective growth mask is suppressed, and imperfect growth of the contact layer and imperfect contact of the electrode directly formed on the upper surface of the wave-guide are suppressed, respectively. In addition, the generation of dark lines due to stress between the selective growth mask and the semiconductor layer constituting the upper part of the wave-guide is suppressed, and reduction in light output power is prevented.

Semiconductor light emitting device

A semiconductor device includes a silicon substrate having a surface and a 20.about.150 .mu.m deep recess produced at the surface by anisotropic etching, the recess having a bottom and a plurality of side walls; an electrode disposed on a region at the bottom of the recess, the region including an element region where a semiconductor element is to be mounted and a wire bonding region where a wire is to be bonded; a semiconductor element mounted on a portion of the electrode within the element region; and a wire bonded to a portion of the electrode within the wire bonding region. In this semiconductor device, since the electrode is disposed at the flat bottom of the recess, there is no difference in level, i.e., no step, in the region, where the electrode is disposed, between the element region and the wire bonding region. Therefore, unwanted breaking of the electrode is avoided, and degradation of characteristics due to such a breaking is avoided.

Semiconductor device

An apparatus for die bonding a semiconductor element to a submount with a soldering material includes a laser light source emitting laser light of a wavelength transmitting through the submount and a means for introducing the laser light emitted from the laser light source to a prescribed position and radiating the laser light to a required part of the submount. A method for die bonding a semiconductor element to a submount, includes placing a soldering material on the submount and placing the semiconductor element on the soldering material, radiating laser light of a wavelength transmitting through the submount from the rear surface side of the submount toward the soldering material so as to heat and melt the soldering material, and thereby bonding the semiconductor element to the submount. Thus, the die bonding is performed in a short time while observing the characteristic of the semiconductor element, so that deformation of the element or deterioration of the element characteristic during the die bonding is prevented even when the semiconductor element is subjected to a high temperature for a long time during the die bonding.

Apparatus and method for die bonding semiconductor element

A semiconductor light-emitting device includes a plurality of light-emitting elements disposed on a single substrate. Each light-emitting element includes a plurality of light-emitting regions that can be driven independent of each other to emit light. The largest spacing between light-emitting regions of each light-emitting element is selected such that light emitted from any of the light-emitting regions of that element can impinge on the same light-responsive element associated with that light-emitting element.

Semiconductor light-emitting device

In an optical semiconductor device in which a light emitting element and a light receiving element for monitoring light from the light emitting element are mounted integrally, a spherical lens is provided at a light receiving portion of the light receiving element, the lens having a light receiving area larger than that of said light receiving portion and the spherical surface of the spherical lens is oriented to the light emitting element.

Growing community of inventors

Tokyo, Japan

Yousuke Yamamoto