Sony Corporation

Yousuke Murakami

Masato Doi

Toyoharu Oohata

Hiroyuki Okuyama

Goshi Biwa

Etsuo Morita

A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate () is provided with a crystal layer () with a buffer layer () in between. The crystal layer () has spaces (), () in an end of each threading dislocation Delongating from below. The threading dislocation Dis separated from the upper layer by the spaces (), (), so that each threading dislocation Dis blocked from propagating to the upper layer. When the displacement of the threading dislocation Dexpressed by Burgers vector is preserved to develop another dislocation, the spaces (), () vary the direction of its displacement. As a result, the upper layer above the spaces (), () turns crystalline with a low dislocation density.

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Kanagawa, Japan

Yousuke Murakami