Qualcomm Incorporated

Youseok Suh

Haining S Yang

Junjing Bao

Youn Sung Choi

Kwanyong Lim

Yanxiang Liu

Jihong Choi

Hyunwoo Park

In some aspects, a semiconductor die includes an insulation layer disposed on a substrate, a gate spacer disposed in the insulation layer, a gate disposed between the gate spacer, a first dielectric gate layer disposed on the gate between the gate spacer, a second dielectric gate layer disposed on the first dielectric gate layer between the gate spacer, a gate contact coupled to the gate and in contact with the first dielectric gate layer and the second dielectric gate layer, and a source/drain contact that has a single inner spacer.

Semiconductor having a source/drain contact with a single inner spacer

Certain aspects of the present disclosure generally relate to techniques for reducing leakage current in polysilicon-on-active-edge structures. An example transistor structure includes one or more active devices and at least one dummy device disposed at an edge of the transistor structure, wherein the at least one dummy device has a different gate structure than the one or more active devices.

Leakage current reduction in polysilicon-on-active-edge structures

A semiconductor device may include a source/drain contact trench adjacent to a gate. The source/drain contact trench may include a first portion and a second portion on the first portion. The semiconductor device also may include an insulating contact spacer liner within the source/drain contact trench. The insulating contact spacer liner contacts the first portion but not the second portion of the source/drain contact trench. The semiconductor device may further include a conductive material within the insulating contact spacer liner and the second portion of the source/drain contact trench. The conductive material may land in a source/drain region of the semiconductor device.

Contact for semiconductor device

An integrated circuit (IC) is fabricated with transistors and gated diodes having selected epitaxial growth. The transistors may be Field-Effect Transistors (FETs) for example, and more specifically, may be fin-based FETs (finFETs) where fins are fabricated, in part, using an epitaxial growth process. The IC is further fabricated with gated diodes. Selected gated diodes within the IC are fabricated using the epitaxial growth process on the fins of the gated diode to form an anode and a cathode. Other selected gated diodes are fabricated without using epitaxial growth processes to form the anode and the cathode. In still another aspect, selected gated diodes are fabricated with epitaxial growth processes on either the anode or the cathode, but not both. In an exemplary aspect, the other selected gated diodes are part of electrostatic discharge (ESD) protection circuits in an input/output (I/O) region of the IC.

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San Diego, CA, United States of America

Youseok Suh