Samsung Electronics Co., Ltd.

Youse Kim

Bongsoon Lim

Sangwan Nam

Hyunggon Kim

Junyoung Ko

Heewon Kim

A nonvolatile memory device includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer includes word-lines, bit-lines and a memory cell array which includes one or more memory blocks spaced apart from each other, one or more dummy blocks between the one or more memory blocks and a through-hole via region. The second semiconductor layer is under the first semiconductor layer includes a control circuit. The control circuit divides each of the one or more dummy blocks into an adjacent sub-block directly contacting the through-hole via region and a non-adjacent sub-block based on a relative distance from the through-hole via region in the first direction and uses each of the non-adjacent sub-blocks as a sub-block to store data.

Nonvolatile memory device

Provided is a non-volatile memory device. The non-volatile memory device includes: a memory cell array including cell strings, each including memory cells respectively connected to word lines; a page buffer circuit including page buffers respectively connected to the memory cells through bit lines, wherein a first page buffer is connected to a first cell string through a first bit line; a control logic circuit configured to control a pre-sensing operation to disconnect the first bit line and the first cell string from each other during a pre-sensing period for detecting a defect of the first bit line and control a post-sensing operation to connect the first bit line and the first cell string to each other in a post-sensing period for detecting defects of the word lines and the first bit line; and a defect detection circuit configured to detect defects of the word lines based the sensing operations.

Growing community of inventors

Suwon-si, South Korea

Youse Kim