Samsung Electro-mechanics Co., Ltd.

Georgia Tech Research Corporation

Younsuk Kim

Chang-Ho Lee

Wangmyong Woo

Kyu Hwan An

Jaejoon Chang

Ki Seok Yang

Joy Laskar

Shinichi Iizuka

Haksun Kim

Dong Ho Lee

Ockgoo Lee

Hyungwook Kim

Kijoong Kim

Hyogun Bae

Systems and methods may be provided for a power amplifier system. The systems and methods may include a plurality of power amplifiers, where each power amplifier includes at least one output port. The systems and methods may also include a plurality of primary windings each having a first number of turns, where each primary winding is connected to at least one output port of the plurality of power amplifiers, and a single secondary winding inductively coupled to the plurality of primary windings, where the secondary winding includes a second number of turns greater than the first number of turns.

Systems and methods for power amplifiers with voltage boosting multi-primary transformers

Embodiments of the invention may provide for enhancement systems and methods for a power amplifier output control system. In an example embodiment, driver amplifier control may be provided in conjunction with power amplifier control to improve the power efficiency and/or dynamic range of the transmitter system. Furthermore, control over the driver amplifier may allow for relaxed power control slope, which may lessens the burden of digital to analog converters (DACs) in transmitter systems such as cellular transmitter systems. Also, systems and methods in accordance with example embodiments of the invention may provide a less sensitive solution to operational environment variations such as temperature, battery power voltage and implementation IC process.

Systems and methods for switching mode power amplifier control

Embodiments of the invention may provide for systems and methods for providing a power amplifier with integrated passive device, thereby improving the performance of the power amplifier. The power amplifier may include a signal amplification section, a power combining section, and a coupling device section that interconnects the signal amplification section and the power combining section. The signal amplification section may be implemented on a first substrate, and the power combining section may be implemented on a second substrate, where the first substrate and the second substrate may be different. The power combining section may be implemented by the integrated passive device (IPD) that may have characteristics of high performance passive device with flexibility of implementing diverse functions, including a notch filter, a low pass filter, and/or bypass capacitance for bias network. The power combining section implemented by the integrated passive device may have an improved power combining efficiency.

Systems and methods for power amplifier with integrated passive device

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Yong-In, South Korea

Younsuk Kim