Samsung Electronics Co., Ltd.

Adeka Corporation

Dow Corning Corporation

Dnf Co., Ltd.

Sk Specialty Co., Ltd

Younjoung Cho

Younsoo Kim

Jaesoon Lim

Seungmin Ryu

Gyu-Hee Park

Takanori Koide

Gyuhee Park

Soyoung Lee

Kazuki Harano

Akio Saito

Yutaro Aoki

Hiroyuki Uchiuzou

Wonwoong Chung

Yoshiki Manabe

Wakana Fuse

Seung-min Ryu

Haeryong Kim

Jeonggyu Song

Atsushi Yamashita

Kyooho Jung

Sunmin Moon

Haruyoshi Sato

Kazuya Saito

Sunhye Hwang

Changsu Woo

Hyunwoo Kim

Hiroki Sato

Naoki Yamada

Masayuki Kimura

Jin Wook Lee

Sang Ick Lee

Xiaobing Zhou

Pankwi Park

Myong Woon Kim

Kiyoshi Murata

Jaehyoung Choi

Tsubasa Shiratori

Masashi Shirai

Michael David Telgenhoff

Sangyeol Kang

Jungsik Choi

Keum Seok Park

Jeongho Yoo

Jaewoon Kim

Sang Yong Jeon

Seung-Min Ryu

Hiroshi Nihei

Chin Moo Cho

Mijeong Kim

JunHyun Cho

Jinhee Lee

Chayoung Yoo

In Kyung Jung

Byungkil Lee

Yonghun Shin

Sungdo Lee

Kouhei Sugimoto

Yeonock Han

Byung Koo Kong

Changeun Jang

Yangsun Park

Youngha Song

Yousuke Satou

Kyunghye Jung

Takamasa Miyazaki

Jiyu Choi

An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),

Organometallic compound and method of manufacturing integrated circuit using the same

An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I):

Organometallic adduct compound and method of manufacturing integrated circuit using the same

A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compound

An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):

Yttrium compound and method of manufacturing integrated circuit device by using the same

A deposition system and a gas storage device, the deposition system including a process chamber; and a gas supply outside of the process chamber, the gas supply being configured to provide monochlorosilane, wherein the gas supply includes a cabinet; and a gas container inside the cabinet, and the gas container includes aluminum (Al).

Gas container and deposition system including the same

A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1:M2L)  [Chemical Formula 1]In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each Lmay independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R, R, R, and Rmay each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.

Method of manufacturing semiconductor device

A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):

Molybdenum compound and method of manufacturing integrated circuit device using the same

A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1. 

Metal compounds and methods of fabricating semiconductor devices using the same

A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: 

Niobium compound and method of forming thin film

Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1. 

Aluminum compound and method for manufacturing semiconductor device using the same

The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

Cobalt precursor and methods for manufacture using the same

A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.

A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.

Gas storage cylinder, deposition system, and method of manufacturing semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Younjoung Cho