Samsung Electronics Co., Ltd.

Youngwook Park

Mansug Kang

Heesook Park

Seonghwee Cheong

Myung-ho Kong

Taekjung Kim

Jihoon Kim

Kyo-Suk Chae

Jun-Bum Lee

Ju Hyung We

Myung-Hyun Baek

Dongsik Kong

Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate having a groove therein extending in a first direction, a gate insulating layer in the groove, a first conductive pattern in the groove and on the gate insulating layer, and a word line capping pattern in the groove and on the first conductive pattern. The first conductive pattern may include a first material and may include a first conductive portion adjacent to the word line capping pattern and a second conductive portion adjacent to a bottom end of the groove. A largest dimension of a grain of the first material of the first conductive portion may be equal to or larger than that of the first material of the second conductive portion.

Semiconductor device having conductive portions in a groove and contacting a gate insulating layer

A semiconductor memory device can include a first conductive line crossing over a field isolation region and crossing over an active region of the device, where the first conductive line can include a first conductive pattern being doped, a second conductive pattern, and a metal-silicon-nitride pattern between the first and second conductive patterns and can be configured to provide a contact at a lower boundary of the metal-silicon-nitride pattern with the first conductive pattern and configured to provide a diffusion barrier at an upper boundary of the metal-silicon-nitride pattern with the second conductive pattern.

Semiconductor devices including metal-silicon-nitride patterns

Growing community of inventors

Osan-si, South Korea

Youngwook Park