Samsung Electronics Co., Ltd.

Youngwook Jeong

Jun-Ho Seo

Sangwon Hwang

Suk-Eun Kang

Haneol Jang

Wanha Hwang

Sang-Hyun Joo

Dogyeong Lee

Juwon Lee

Suk-eun Kang

An operation method of a nonvolatile memory device includes performing a 1-stage program step and a 1-stage verify step on a first word line, storing a first time stamp, performing the 1-stage program step and the 1-stage verify step on a second word line, storing a second time stamp, calculating a delay time based on the first time stamp and the second time stamp, determining whether the delay time is greater than a threshold value, adjusting at least one 2-stage verify voltage associated with the first word line from a first voltage level to a second voltage level based on the delay time, and performing a 2-stage program step and a 2-stage verify step on the first word line. A level of the at least one 1-stage verify voltage is lower than the second voltage level, and the second voltage level is lower than the first voltage level.

Operation method of nonvolatile memory device

A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.

Non-volatile memory device, storage device and program method thereof

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Seoul, South Korea

Youngwook Jeong