Samsung Electronics Co., Ltd.

YoungWoo Cho

Jongmin Baek

Jiwon Kang

Sanghoon Ahn

Heonjong Shin

Wookyung You

Naein Lee

Deokhan Bae

Byunghee Kim

Hwichan Jun

Byung-Kwon Cho

Hak-Sun Lee

Vietha Nguyen

Moon Gi Cho

Songyi Han

Jiwon Yun

Jaeran Jang

Young-ju Park

Inoue Naoya

Il Gyu Kim

Dohyoung Kim

Jong Min Baek

Young-Ju Park

Kichul Park

Tsukasa Matsuda

Kyoung Woo Lee

Euibok Lee

Su Hyun Bark

Anthony Dongick Lee

Sangcheol Na

Min Huh

Sungyup Jung

Soon Gyu Hwang

Jongseo Hong

A semiconductor device including a first insulating structure on a substrate and including a first etch stop layer and a first interlayer insulating layer on the first etch stop layer, a second insulating structure on the first insulating structure and including a second etch stop layer and a second interlayer insulating layer on the second etch stop layer, a conductive line penetrating through the second insulating structure, and extending in a first direction parallel to an upper surface of the substrate, and a plurality of contacts penetrating through the first insulating structure and connected to the conductive line may be provided. The conductive line may include a protrusion extending below the second insulating structure and penetrating through the first interlayer insulating layer to be in contact with the first etch stop layer.

Semiconductor devices

A semiconductor device includes a substrate, a first lower wiring line on the substrate, a first insulation layer on the first lower wiring line, a first dielectric barrier layer and a first etch stop layer sequentially stacked on the first insulation layer, a second insulation layer on the first etch stop layer, a first upper wiring line extending through the second insulation layer, the first etch stop layer, and the first dielectric barrier layer, and a first conductive via in the first insulation layer and electrically connecting the first lower wiring line and the first upper wiring line. An upper surface of the first conductive via protrudes above a lower surface of the first upper wiring line.

Semiconductor device

A semiconductor device includes a substrate including a first region and a second region, a cell gate pattern on the first region of the substrate, a dummy gate pattern on the second region of the substrate, a resistor pattern on the second region of the substrate and over the dummy gate pattern, and a connection structure coupled to each of the connection regions. The resistor pattern includes a body region and connection regions at both sides of the body region. The dummy gate pattern overlaps the body region and does not be overlap the connection regions, when viewed in a plan view.

A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.

Planarized interlayer dielectric with air gap isolation

A method of manufacturing a semiconductor device may include: forming an interlayer insulating layer having openings on a substrate; forming a metal layer in the openings and on the interlayer insulating layer, the metal layer including a sidewall portion on a sidewall of each of the openings and a bottom portion on a bottom surface of each of the openings, wherein the bottom portion is thicker than the sidewall portion; reflowing the metal layer to form metal patterns in the openings, the metal patterns having top surfaces at a level lower than a topmost surface of the interlayer insulating layer; and/or forming capping patterns covering the metal patterns in the openings.

Methods of manufacturing semiconductor devices including capped metal patterns with air gaps in-between for parasitic capacitance reduction

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Suwon-si, South Korea

YoungWoo Cho