Samsung Electronics Co., Ltd.

Samyoung Pure Chemicals Co., Ltd.

Youngtak Kim

Sangjine Park

Jaeuk Shin

Wonjun Lee

Hyeyeong Seo

Hoon Hee Han

Youngchan Kim

Yongsun Ko

Jihoon Jeong

Hyunjung Lee

Byung-Kwon Cho

Hajin Lim

Jaesung Hur

Jihun Cheon

Jungah Kim

Suji Kim

Seulgee Jeon

Bowo Choi

Geunjoo Baek

Chisung Ihn

Sangmoon Yun

Etchant compositions described herein include etchant compositions for etching a silicon film and may include nitric acid, fluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water. The nitrogen compound may include fluorine (F), phosphorus (P), and/or carbon (C). Also described are methods of manufacturing an integrated circuit (IC) device. The methods may include providing a structure in which a silicon film doped at a first dopant concentration and an epitaxial film doped at a second dopant concentration are stacked. The second dopant concentration may be different from the first dopant concentration. The silicon film may be selectively etched from the structure by using an etchant composition.

Etchant compositions and methods of manufacturing integrated circuit devices using the same

A semiconductor device includes a landing pad, a first insulating pattern in contact with a lower portion of a side surface of the landing pad, a pad oxide layer having a lateral portion disposed on a portion of an upper surface of the landing pad and a vertical portion in contact with an upper portion of the side surface of the landing pad, a second insulating pattern in contact with an upper surface of the first insulating pattern and covering the first insulating pattern and the pad oxide layer, and a lower electrode that vertically passes through the second insulating pattern and is in contact with a portion of the upper surface and an upper portion of a side surface of the landing pad.

Semiconductor devices having landing pads

A semiconductor device is provided including a plurality of first conductive patterns disposed on a substrate. A first insulating pattern is disposed between the plurality of first conductive patterns. A plurality of second conductive patterns is disposed on the plurality of first conductive patterns. A first memory cell structure is disposed between the plurality of first conductive patterns and the plurality of second conductive patterns. A second insulating pattern is disposed on the first insulating pattern and on a side surface of the first memory cell structure. A first vertical structure is disposed on the first insulating pattern and passing through the second insulating pattern to an upper surface of the substrate. The first insulating pattern has a plurality of recess portions. The plurality of recess portions include a first recess portion and a second recess portion. The first recess portion and the second recess portion have different depths.

Semiconductor device including vertical structures and a method of manufacturing the same

A supercritical drying apparatus and a method of drying a substrate, the apparatus including a drying chamber configured to receive a supercritical fluid and to dry a substrate; a chuck in the drying chamber, the chuck being configured to receive the substrate; and a particle remover in the drying chamber, the particle remover being configured to remove dry particles from the substrate by heating the substrate with radiant heat.

Supercritical drying apparatus and method of drying substrate using the same

A semiconductor device, includes: a first conductive structure on a substrate; a second conductive structure on the first conductive structure; and a first memory cell structure between the first conductive structure and the second conductive structure, wherein the first memory cell structure includes: a switching material pattern on the first conductive structure; a data storage material pattern on the switching material pattern; and an upper conductive pattern on the data storage material pattern, wherein a first width of a lower region of the data storage material pattern is less than a first width of the switching material pattern, and wherein a first width of the upper conductive pattern is less than a width of an upper region of the data storage material pattern.

Semiconductor device including a data storage material pattern

An image sensor and a method of fabricating an image sensor are provided, the image sensor including a plurality of color filters spaced apart from each other on a semiconductor substrate; a protective layer covering sidewalls of the color filters and top surfaces of the color filters; and a low-refractive pattern filling a space between the color filters.

Image sensor and method of fabricating the same

Growing community of inventors

Hwaseong-si, South Korea

Youngtak Kim