Lg Electronics Inc.

Shangrao Xinyuan Yuedong Technology Development Co. Ltd.

Jingao Solar Co., Ltd.

Shangrao Jinko Solar Technology Development Co., Ltd

Youngsung Yang

Juhwa Cheong

Manhyo Ha

Yongduk Jin

Seongeun Lee

Junghoon Choi

Hyungjin Kwon

Chungyi Kim

Yiyin Yu

Jungmin Ha

Kyungdong Lee

Sungjin Kim

Changseo Park

Minho Choi

Taeyoung Kwon

Hyunjung Park

Haejong Cho

Jaewoo Choi

Giwon Lee

Mihee Heo

Gyeayoung Kwag

Myungjun Shin

Younggu Do

Mann Yi

Juhwa Jung

Goo Hwan Shim

A solar battery according to the present embodiment has an electrode, which includes a metal and an adhesive material, formed in a conductive region including a polycrystalline semiconductor layer, and thus, the electrical characteristics of the solar battery may be improved and the manufacturing process thereof may be simplified. More specifically, the solar battery includes a semiconductor substrate, and the conductive region including the polycrystalline semiconductor layer is positioned on one surface of the semiconductor substrate.

Solar battery, and solar battery panel and method for manufacturing same

The present disclosure relates to a solar cell and a solar cell panel including the same, and more particularly, to a solar cell with an improved structure and an improved manufacturing process and a solar cell panel including the same.

Solar cell and solar cell panel including same

In a method for manufacturing a solar cell panel according to an embodiment of the present invention, a step of forming an electrode comprises the steps of: forming a main electrode part on a conductive region; and forming a connection electrode part on the main electrode part by using a paste comprising metal particles having a first metal, a solder material having a second metal different from the first metal, and an adhesive material.

Solar cell panel manufacturing method and paste for solar cell electrode used therefor

A method for manufacturing a solar cell, the method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer includes depositing a semiconductor material; forming a capping layer on the semiconductor layer; and forming an electrode connected to the semiconductor layer, wherein the tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure, wherein a pressure of the forming of the semiconductor layer is smaller than the pressure of the forming of the tunneling layer, wherein the forming of the semiconductor layer further comprises doping the semiconductor layer with dopants, and wherein the capping layer is formed between the forming of the semiconductor layer and the forming of the electrode.

Solar cell and method for manufacturing the same

A solar cell can include a front passivation region including a plurality of layers formed of different materials from each other and including a first aluminum oxide layer and a first silicon nitride layer, and a back passivation region including a plurality of layers formed of different materials from each other and including a second aluminum oxide layer and a second silicon nitride layer, wherein a thickness of a first silicon nitride layer is greater than a thickness of the first aluminum oxide layer, and a thickness of a second silicon nitride layer is greater than a thickness of the second aluminum oxide layer.

Solar cell

Disclosed is a solar cell including a control passivation film on one surface of a semiconductor substrate, and being formed of a dielectric material; and a semiconductor layer on the control passivation film, wherein the semiconductor layer including a first conductive region having a first conductive type and a second conductive region having a second conductive type opposite to the first conductive type. The semiconductor substrate includes a diffusion region including at least one of a first diffusion region and a second diffusion region adjacent to the control passivation film, wherein the first diffusion region being locally formed to correspond to the first conductive region and having a doping concentration lower than a doping concentration of the first conductive region, wherein the second diffusion region being locally formed to correspond to the second conductive region and having a doping concentration lower than a doping concentration of the second conductive region.

A method of manufacturing a solar cell, the method includes forming a protective film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon, wherein the forming of the protective film includes a heat treatment process performed at a heat treatment temperature of approximately 600 degrees Celsius or more under a gas atmosphere including nitrogen, and wherein the heat treatment process includes: a main section, during which the heat treatment temperature is maintained, a temperature increase section before the main section, during which an increase in temperature occurs from an introduction temperature to the heat treatment temperature, and a temperature reduction section after the main section, during which a decrease in temperature occurs from the heat treatment temperature to a discharge temperature.

Method of manufacturing solar cell

A solar cell can include a substrate of a first conductive type; an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type; a back surface field region which is positioned at a back surface opposite the front surface of the substrate; a front passivation region including a plurality of layers which are sequentially positioned on the emitter region; a back passivation region including a plurality of layers which are sequentially positioned on the back surface field region; a front electrode part which passes through the front passivation region and is connected to the emitter region, wherein the front electrode part comprises a plurality of front electrodes that are apart from each other and a front bus bar connecting the plurality of front electrodes; a back electrode part which passes through the back passivation region and is connected to the back surface field region, wherein the back electrode part comprises a plurality of back electrodes that are apart from each other and a back bus bar connecting the plurality of back electrodes, wherein the front passivation region includes a first aluminum oxide layer and the back passivation region includes a second aluminum oxide layer.

Discussed is a method for manufacturing a solar cell. The method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer including depositing a semiconductor material; and forming an electrode connected to the semiconductor layer. The tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure.

A method for manufacturing a solar cell, the method including: preparing a semiconductor substrate; ion-implanting a pre-amorphization element to form an amorphous layer at at least a part of one surface of the semiconductor substrate; ion-implanting a first conductive type dopant to the one surface of the semiconductor substrate to form a first dopant layer; and forming a first electrode electrically connected to the first dopant layer, wherein a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.

A solar cell is discussed, and the solar cell includes: a semiconductor substrate; a tunneling layer on a surface of the semiconductor substrate; a buffer layer on the tunneling layer, wherein the buffer layer is a separate layer from the tunneling layer and includes an intrinsic buffer portion, and wherein at least one of a material, a composition and a crystalline structure of the buffer layer is different from those of the tunneling layer; a conductive type region on the tunneling layer, and including a first conductive type region having a first conductive type and a second conductive type region having a second conductive type; and an electrode connected to the conductive type region. The buffer layer is positioned adjacent to the tunneling layer and is apart from the electrode.

Disclosed is a method of manufacturing a solar cell. The method includes forming a protective film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.

A solar cell according to an embodiment includes a semiconductor substrate; a first dopant layer formed at one surface of the semiconductor substrate; and a first electrode electrically connected to the first dopant layer. At least a part of the first dopant layer includes a pre-amorphization element, and a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.

A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type, a front passivation region including a plurality of layers which are sequentially positioned on the emitter region, a back passivation region which is positioned on a back surface opposite the front surface of the substrate and includes three layers, a plurality of front electrodes which pass through the front passivation region and are connected to the emitter region, and at least one back electrode which passes through the back passivation region and is connected to the substrate.

A solar cell is discussed. The solar cell according to an embodiment includes a semiconductor substrate, a first conductive type region and a second conductive type region disposed on the same side of the semiconductor substrate, wherein at least one of the first and second conductive type regions includes a main region and a boundary region disposed at a peripheral portion of the main region, and the boundary region has at least one of a varying doping concentration and a varying doping depth.

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Seoul, South Korea

Youngsung Yang