Disco Corporation

Youngsuk Kim

Byeongdeck Jang

Akihito Kawai

Shunsuke Teranishi

Zhiwen Chen

Takeshi Sakamoto

Kazuhiro Koike

Yosuke Murata

Satoshi Kobayashi

Nobuyuki Kimura

Shigenori Harada

Takahiro Ishii

Shoichi Kodama

Yoshiteru Nishida

Hidekazu Iida

Kenta Chito

Yuki Ikku

Fumio Uchida

Teppei Nomura

Maki Sakai

An inspection method includes applying a laser beam to a semiconductor chip to reflow a bump disposed on a surface of the semiconductor chip and included in an irradiation range of the workpiece, the laser beam being applied from an opposite surface of the semiconductor chip, capturing an image of the irradiation range with use of a thermal camera while the laser beam is applied to the semiconductor chip, and acquiring temperature information regarding the semiconductor chip from the captured image, storing in advance reference temperature information that represents temperature information obtained when the semiconductor chip and the board have normally been bonded to each other by the laser beam applied thereto, and determining whether or not the semiconductor chip and the board have normally been bonded to each other by the laser beam applied thereto, on the basis of the reference temperature information and the temperature information.

Inspection method

A method of manufacturing an LED display panel includes holding an LED wafer on a first holding unit, holding a circuit board on a second holding unit, positioning electrodes of the board at positions corresponding to electrode layers of the wafer while a face side of the board and a face side of the wafer are facing each other, joining the electrode layers and the electrodes to each other by applying a laser beam having a wavelength absorbable by a reverse side of one of the board and the wafer, to the reverse side of the one of the board and the wafer, thereby heating at least either the electrode layers or the electrodes, and breaking the buffer layers by applying a pulsed laser beam having a wavelength transmittable through a substrate of the wafer, to the buffer layers through a reverse side of the wafer.

Method of manufacturing LED display panel

A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a removing step of removing, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, and a fitting step of fitting, into a removed region formed by removing the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the removed region.

Wafer manufacturing method and laminated device chip manufacturing method

Energy is locally supplied to a cutting surface that is formed in an outer circumferential region of a wafer in a trimming step, before a grinding step of grinding the wafer. This can remove or repair at least part of a damage layer formed in the outer circumferential region of the wafer due to the trimming step. As a result, breakage of the wafer that originates from the outer circumferential region in the grinding of the wafer which has been subjected to the edge trimming and generation of dust in a step after this grinding can be suppressed.

Processing method of wafer

A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a removing step of separating, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, and a fitting step of fitting, into a through hole formed by separating the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the through hole.

A laser reflow apparatus reflows solder bumps disposed on a side of a semiconductor chip in a workpiece and included in an irradiation range on the workpiece by applying a laser beam to an opposite side of the semiconductor chip. The laser reflow apparatus includes a spatial beam modulation unit including a laser power density setting function to locally set the laser power density in the irradiation range of a laser beam emitted from a laser beam source, and an image focusing unit including an image focusing function to focus the laser beam emitted from the laser beam source and apply the focused laser beam to the irradiation range on the workpiece.

Laser reflow apparatus and laser reflow method

A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a support substrate fixing step of fixing the wafer to a support substrate, a removing step of removing, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, and a fitting step of fitting, into a removed region formed by removing the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the removed region, and fixing the device chip to the support substrate.

A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a removing step of removing, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, a support substrate fixing step of fixing the wafer to a support substrate, and a fitting step of fitting, into a removed region formed by removing the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the removed region, and fixing the device chip to the support substrate.

A workpiece cutting method of cutting a workpiece along a plurality of crossing division lines formed on a front side of the workpiece, by using a cutting blade having a thickness gradually decreasing toward an outer circumference of the cutting blade. The workpiece cutting method includes a shape checking step of checking a shape of the cutting blade; a cut depth setting step of setting a cut depth by the cutting blade into the workpiece according to the shape checked in the shape checking step such that a width of a cut groove to be formed on the front side of the workpiece becomes a previously set value; and a cutting step of cutting the workpiece with the cut depth set in the cut depth setting step, by forcing the cutting blade into the workpiece from the front side thereof.

Workpiece cutting method

A wafer processing apparatus includes a chuck table that holds a wafer with metal electrodes embedded therein, a processing unit that grinds or polishes the wafer held by the chuck table, a cassette mounting table for a cassette in which such wafers can be accommodated, a transfer unit that holds and transfers each wafer between the cassette and the chuck table, a checking unit configured to check whether or not at least one of the metal electrodes is exposed on the wafer, a notification unit that notifies that the at least one metal electrode is exposed, and a control unit that controls operations of the processing unit and the transfer unit. If the exposure of the at least one metal electrode on the wafer is detected by the checking unit, the control unit stops the processing of the wafer and the transfer of the wafer.

Wafer processing apparatus

A method of processing a workpiece includes sticking an adhesive layer side of a resin sheet having a layered structure that includes the adhesive layer and a base material layer, to a support base, forming surface irregularities on a face side of the base material layer that is opposite the adhesive layer; placing a face side of the workpiece and the face side of the base material layer in facing relation to each other and pressing the workpiece against the resin sheet or pressing the resin sheet against the workpiece, thereby bringing the workpiece into intimate contact with the resin sheet to fix the workpiece to the resin sheet; holding a surface of the support base that is opposite the resin sheet on a holding surface of a chuck table, and grinding a reverse side of the workpiece with a grinding stone disposed in facing relation to the holding surface.

Method of processing workpiece and resin sheet unit

A method of processing a workpiece includes sticking an adhesive layer side of a resin sheet having a layered structure that includes an adhesive layer and a base material layer, to an annular frame having an opening in covering relation to the opening, forming surface irregularities on a face side of the base material layer that is opposite the adhesive layer, placing the face side of the workpiece and the face side of the base material layer in facing relation to each other and pressing the workpiece against the resin sheet or pressing the resin sheet against the workpiece, thereby bringing the workpiece into intimate contact with the resin sheet to fix the workpiece to the resin sheet, holding the face side of the workpiece fixed to the resin sheet on a holding surface of a chuck table, and grinding the reverse side of the workpiece with a grinding stone.

A manufacturing method of a semiconductor package includes a groove forming step of cutting a semiconductor package substrate from an upper surface side along division lines in a cut-in-depth range of at least such a depth as to cause a ground line included in a wiring substrate to be exposed in a processing groove to such a depth that the semiconductor package substrate is not fully cut with a first cutting blade, thereby forming the processing groove having a first width at least on an upper surface of a sealing material, a shielding layer forming step of forming a shielding layer on a side surface of the processing groove, a bottom surface of the processing groove, and the upper surface of the sealing material with a conductive material from an upper side of the sealing material, and a dividing step of, cutting the semiconductor package substrate into individual semiconductor packages.

Growing community of inventors

Tokyo, Japan

Youngsuk Kim