Samsung Electronics Co., Ltd.

Youngsuk Chai

Sangjin Hyun

Wonkeun Chung

Heonbok Lee

Chunghwan Shin

A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

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Seoul, South Korea

Youngsuk Chai