Samsung Electronics Co., Ltd.

Youngsoo Sohn

Seok Hwan Kim

Seungjun Bae

Kee-Won Kwon

Junhan Bae

Kwangil Park

Jung Hoon Chun

Jeongdon Ihm

Taeyoung Oh

Jongwan Kim

Dongmin Kim

Kyungho Kim

Kyoungho Kim

Taekwoon Kim

Hohyun Shin

Seunghwan Hong

Yoochang Sung

Hyunsung Shin

Hyungi Kim

Myeongo Kim

Changhyun Bae

A memory module including a row hammer counter chip, a memory system including the same, and a method of operating the memory system are provided. The memory module includes a plurality of data chips each of which is configured to store a data set corresponding to a plurality of burst lengths, and at least one row hammer counter chip including counter memory cells each of which is connected to a word line, among a plurality of word lines, for each of the plurality of data chips, wherein the at least one row hammer counter chip is configured to store in each of the counter memory cells connected to the word line, a number of times the word line is accessed for each of the plurality of data chips during a row hammer monitoring time frame.

Memory module and memory system including row hammer counter chip and operating method thereof

A receiver for cancelling common mode offset and crosstalk that amplifies a voltage difference between an input signal and a reference voltage to generate first and second output signals and an internal signal, that generates the same third and fourth output signals as the first and second output signals, generates average voltage levels of the third and fourth output signals by using first and second switching elements and low pass filters to output the average voltage levels as first and second feedback signals, and cancels a common mode offset between the first output signal and the second output signal based on a voltage difference between the first feedback signal and the second feedback signal, and that generates a control signal to cancel crosstalk of the internal signal by turning on/off the first and second switching elements connected to the low pass filters.

Receiver for cancelling common mode offset and crosstalk

A semiconductor memory device including a memory cell array and an error relief circuit may be provided. The memory cell array includes plurality of memory cells which store data and are coupled to a plurality of word-lines and a plurality of bit-lines. The error relief circuit includes a replacement memory. The error relief circuit receives a command and an address from an external device, stores a first data associated with a first address in the replacement memory in response to detecting a sequence of the consecutively received commands with respect to the first address, and inputs/outputs the first data associated with the first address through the replacement memory.

Semiconductor memory device and memory system including the same

A phase-rotating phase locked loop (PLL) may include first and second loops that share a loop filter and a voltage controlled oscillator in order to perform the operation of a phase-rotating PLL, the first and second loops configured to activate in response to an enable signal. The PLL may further include a phase frequency detection controller configured to provide the enable signal to the first and second loops in response to a transition of a coarse signal that may be applied as a digital code.

Phase-rotating phase locked loop and method of controlling operation thereof

A transmitter suitable for signal driving of a semiconductor device includes a driving power voltage generator and an output driver. The driving power voltage generator includes an NMOS transistor having a drain connected with a first voltage supply terminal, a gate connected to receive a second voltage lower than a voltage of the first voltage supply terminal, and a source outputting an output driving voltage and configured to perform source follower voltage regulating.

Transmitter having source follower voltage regulator

A semiconductor memory device includes a memory cell array, an output driver having a pseudo-open drain (POD) structure and providing read data from the memory cell array in a de-emphasis mode, and control logic controlling the output driver in response to a read command to activate the de-emphasis mode. The control logic activates the de-emphasis mode only during an output period during which the read data is output by the output driver.

Pseudo-open drain type output driver having de-emphasis function, semiconductor memory device, and control method thereof

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Seoul, South Korea

Youngsoo Sohn