Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Sungkyunkwan University

Georgia Tech Research Corporation

Samsung Electro-mechanics

Youngsik Hur

Jeongki Ryoo

Woncheol Lee

Myeong Woo Han

Wonsun Hwang

Wongi Kim

Youngkwan Lee

Yoosam Na

Nam Ki Kim

Andrew Joo Kim

Hyungjin Lee

Dongok Ko

Jaemin Keum

Suyeon Han

Geunyong Lee

Chang-Ho Lee

Junghyun Cho

Won Wook So

Haksun Kim

Nam Heung Kim

Yunseo Park

Sungyong An

Keum Cheol Hwang

Juhyoung Park

Daeki Lim

Dukhyun Kim

Byeonghak Jo

Taehee Han

Jeongsuk Lee

Kihong Kim

Seongmo Yim

Jongrok Kim

Yun Ho Lee

Seungchul Pyo

Jongmo Lim

Gyu-Suck Kim

Matthew Kuhn

Joy Laskar

Taejoong Song

Yonghoon Kim

Jae Yeong Kim

Geoffrey Thomas Haigh

Hyun Paek

Chin Mo Kim

Yong-Serk Kim

Jinyong Kim

Kyutae Lim

Dooil Kim

Jae Joon Chang

Jongmin Park

Hyunjin Yoo

Yuntae Lee

Seongsoo Lee

Jungchul Gong

Patrick Melet

Romain Pelard

Seungmok Oh

Bob Nayar

Wonwook So

Yongho Baek

Kangta Jo

Jaehyouck Choi

Gopal Garg

Yong-serk Kim

A dielectric resonator antenna includes: a first dielectric block; at least one second dielectric block stacked on the first dielectric block in a first direction; and a feed unit disposed in the first dielectric block. A side surface of the first dielectric block facing a second direction crossing the first direction is exposed to an outside of the dielectric resonator antenna.

Multilayer dielectric resonator antenna and antenna module

A radio frequency (RF) switch is provided. The RF switch is configured to switch a RF signal input to a first terminal. The RF switch includes a first transistor, disposed at a first distance from the first terminal, and configured to switch the RF signal, and a second transistor, disposed at a second distance from the first terminal, and configured to switch the RF signal. The first distance is shorter than the second distance, and a number of first contact vias formed in a first electrode in the first transistor is greater than a number of second contact vias formed in a second electrode of the second transistor.

Radio frequency switch

A low noise amplifier includes: an amplification unit including a first transistor and a second transistor connected in a cascode structure and configured to amplify a signal input to a control terminal of the first transistor; and a gain controller connected between a contact point at which the first transistor and the second transistor are connected to each other and a power source voltage, and configured to adjust a gain of the amplification unit.

Low noise amplifier and operation method of low noise amplifier

An antenna apparatus includes: a ground plane including first sides parallel to a first direction and second sides parallel to a second direction, on a plane formed in the first and second directions; a dielectric layer disposed on the ground plane in a third direction; an antenna patch overlapping the ground plane in the third direction; and vias connected to the ground plane and passing through at least a portion of the dielectric layer. Edges of the vias at least partially overlap the first sides of the ground plane in the third direction.

Antenna apparatus

A protection circuit is provided. The protection circuit protects a power amplifier that includes a power transistor configured to receive a power voltage, and a bias circuit configured to supply a bias current to the power transistor. The protection circuit includes: a first transistor, connected between a terminal of the bias circuit and a ground, and configured to sink a first current from the terminal of the bias circuit; and a second transistor, comprising a first terminal connected to the power voltage, a second terminal connected to a control terminal of the first transistor, and a control terminal connected to a reference voltage.

Protection circuit of power amplifier and power amplifier including the same

A power amplifier system includes: a drive stage configured to amplify an RF input signal and implemented in a substrate containing silicon; a power stage including a carrier amplifier configured to amplify a base signal from the RF input signal as amplified by the drive stage, and a peaking amplifier configured to amplify a peak signal from the RF input signal as amplified by the drive stage, the power stage being implemented in a substrate containing gallium arsenide; and a phase compensation circuit configured to change a phase of the RF input signal, wherein either the carrier amplifier or the peaking amplifier is connected to the phase compensation circuit.

Power amplifier system

An antenna apparatus includes antennas, each having first and second feeding portions facing each other across a dielectric layer, and third and fourth feeding portions facing each other across the dielectric layer, and a signal application unit configured to apply a wireless communication signal to the antennas, and including a plurality of output ports, wherein the first and second feeding portions are configured to receive electric signals having a first polarization characteristic, and are respectively connected to first and second output ports that are different from each other among the plurality of output ports, and the third and fourth feeding portions are configured to receive electric signals having a second polarization characteristic that is different from the first polarization characteristic, and are respectively connected to third and fourth output ports that are different from each other among the plurality of output ports.

Antenna apparatus and electric device

A radio frequency (RF) switch system, an RF switch protective circuit, and a protecting method thereof are provided. The RF switch system may include an RF switch and a protective circuit. The RF switch may be connected between a port that receives an RF signal and a ground. The protective circuit may detect a first voltage that is a voltage that is generated when the first RF switch is turned off, and may transmit an impedance value that is varied based on the first voltage to the port.

Radio frequency switch system, radio frequency switch protective circuit, and protecting method thereof

A power amplifier system includes: a base substrate; a driver stage configured to receive and amplify an RF input signal, wherein the driver stage is disposed within the base substrate and is implemented in a first substrate; and a power stage configured to receive the RF input signal amplified by the driver stage and amplify the RF input signal amplified by the driver stage, wherein the power stage is disposed outside the base substrate and is implemented in a second substrate independent from the first substrate.

An antenna device including: a ground plane; an antenna pattern overlapping the ground plane with respect to a first direction; a dielectric layer interposed between the ground plane and the antenna pattern; a feed via coupled with the antenna pattern and penetrating at least a portion of the dielectric layer; a ground via connected to the ground plane and penetrating at least a portion of the dielectric layer; and a ground pattern extending from the ground via and disposed adjacent to a lateral surface of the feed via in a second direction that forms a predetermined angle with the first direction.

Antenna device

An antenna device is provided. The antenna device includes a first antenna patch configured to transmit and receive an RF signal in a first frequency bandwidth and disposed a first dielectric layer; a second antenna patch disposed on a second dielectric layer and coupled to the first antenna patch; a third antenna patch disposed on a third dielectric layer and coupled to the second antenna patch; and a fourth antenna patch configured to transmit and receive an RF signal in the second frequency bandwidth, wherein the second antenna patch includes a plurality of first sub-antenna patches that do not overlap the first antenna patch, and the third antenna patch includes a plurality of second sub-antenna patches that overlap the first sub-antenna patches.

A method of manufacturing a semiconductor package includes preparing a core substrate having an upper surface and a lower surface, and including a cavity. A passive component is disposed in the cavity. A first insulating layer is formed on the upper surface of the core substrate and in the cavity and encapsulates the passive component. Through-vias are formed that penetrate the core substrate and the first insulating layer, and a first wiring layer is formed on the first insulating layer. The first wiring layer connects the through-vias and the passive component. A connection structure including an insulating member is formed on the first insulating layer and a redistribution layer is formed in the insulating member. The redistribution layer is connected to the first wiring layer. A semiconductor chip is disposed on an upper surface of the connection structure. The semiconductor chip has connection pads connected to the redistribution layer.

Semiconductor package

An antenna device includes: a dielectric layer including a first edge extending in a first direction and a second edge, shorter that the first edge, extending in a second direction; a first feed via penetrating a portion of the dielectric layer in a third direction, and disposed adjacent to the second edge; a second feed via penetrating a portion of the dielectric layer in the third direction, disposed adjacent to the first edge; a feed pattern connected to the second feed via; and an antenna patch disposed on the second feed via and the feed pattern in the third direction, and coupled to the first feed via, the second feed via, and the feed pattern. The antenna patch overlaps the first feed via in a direction parallel to the first direction or the second direction. The antenna patch overlaps the feed pattern in a direction parallel to the third direction.

An antenna apparatus includes: a first dielectric layer having a first dielectric constant; a first patch antenna pattern disposed in the first dielectric layer; a second dielectric layer having a second dielectric constant; a second patch antenna pattern disposed on the second dielectric layer; a first feed via coupled to the first patch antenna pattern; and a second feed via coupled to the second patch antenna pattern. The first dielectric constant is higher than the second dielectric constant, and a frequency of a signal transmitted/received by the first patch antenna pattern is lower than a frequency of a signal transmitted/received by the second patch antenna pattern.

A capacitor circuit includes a first capacitor bank and a second capacitor bank. The first capacitor bank includes p switch-capacitor circuits connected to each other in parallel, where p is a natural number of 2 or more, wherein at least two switch-capacitor circuits among the p switch-capacitor circuits have mutually different capacitance values based on a first weight. The second capacitor bank includes q switch-capacitor circuits connected to each other in parallel, where q is a natural number greater than p, wherein at least two of the q switch-capacitor circuits have mutually different capacitance values based on a second weight different from the first weight.

Capacitor circuit and variable capacitance system including the same

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Suwon-si, South Korea

Youngsik Hur