Samsung Electronics Co., Ltd.

Youngseok Song

Myunggil Kang

Uihui Kwon

Yonghee Park

Seungkyu Kim

Ahyoung Kim

Sungchul Park

Seongjun Song

Kyunghwan Jo

An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.

Integrated circuit device

A transmission power control method and an electronic device capable of adjusting a bias of a power amplifier are provided. The electronic device includes: a temperature sensor; a power amplifier (PA); and a controller configured to monitor signals from the temperature sensor, determine a bias value for the PA, based on the monitored signals, and control the PA to amplify a signal for transmission based on the determined bias value.

Electronic device and method of controlling transmission power

Growing community of inventors

Gyeonggi-do, South Korea

Youngseok Song