Seagate Technology Incorporated

Youngpil Kim

Chulmin Jung

Wei Tian

Insik Jin

Dadi Setiadi

Antoine Khoueir

Harry Hongyue Liu

Rodney Virgil Bowman

Hyung-Kyu Lee

Yong Lu

Nurul Amin

Ming Sun

Maroun Khoury

Venugopalan Vaithyanathan

Peter Nicholas Manos

Andrew John Carter

Yongchul Ahn

Jinyoung Kim

Venu Vaithyanathan

Insik Jim

Hsing-Kuen Liou

Paramasiyan Kamatchi Subramanian

Wei Tan

Gyu-Chul Kim

The disclosed technology provides enables incremental step pulse programming (ISPP) operations with variable pulse step height control. In particular, a storage device is configured to select a pulse step height for an ISPP operation of one or more memory cells of a storage device based on a write frequency of data programmed via the ISPP operation. The storage device saves the data by applying a series of electrical pulses to the one or more memory cells, each subsequent pulse increasing in magnitude by the selected pulse step height.

Incremental step pulse programming

Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In some embodiments, an apparatus includes an array of memory cells and a dual polarity charge pump. The dual polarity charge pump has a positive polarity voltage source which applies a positive voltage to a charge storage device to program a selected memory cell to a first programming state, and a negative polarity voltage source which applies a negative voltage to the charge storage device to program the selected memory cell to a different, second programming state.

Programming a memory cell using a dual polarity charge pump

Memory arrays that include a first memory cell having a channel; a first insulator; a floating gate; a second insulator; and a control gate, wherein the first insulator is positioned between the channel and the floating gate, the second insulator is positioned between the floating gate and the control gate; and a second memory cell having a channel; a first insulator; a floating gate; a second insulator; and a control gate, wherein the first insulator is positioned between the channel and the floating gate, the second insulator is positioned between the floating gate and the control gate, wherein the first memory cell and the second memory cell are positioned parallel to each other.

Three dimensional floating gate NAND memory

A memory device includes a stack of layers comprising a plurality of alternating layers of continuous electrically conductive material word line layers with layers of continuous electrically insulating material. A plurality of vias vertically extend through the stack of layers and a vertical bit line is disposed within each via. A layer of switching material separates the vertical bit line from the stack of layers, thereby forming an array of RRAM cells.

Three dimensional resistive memory

A fault tolerant control line configuration useful in a variety of solid state memories such as but not limited to a flash memory. In accordance with some embodiments, an apparatus includes a plurality of memory cells, and a fault tolerant control line. The control line has an elongated first conductive path connected to each of the plurality of memory cells. An elongated second conductive path is disposed in a parallel, spaced apart relation to the first conductive path. A plurality of conductive support members are interposed between the first and second conductive paths to support the second conductive path above the first conductive path.

Fault tolerant control line configuration

Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, a memory cell is provided with a plurality of available programming states to accommodate multi-level cell (MLC) programming. A control circuit stores a single bit logical value to the memory cell using single level cell (SLC) programming to provide a first read margin between first and second available programming states. The control circuit subsequently stores a single bit logical value to the memory cell using virtual multi-level cell (VMLC) programming to provide a larger, second read margin between the first available programming state and a third available programming state.

Using different programming modes to store data to a memory cell

Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In accordance with some embodiments, a soft erasure is performed on a block of memory cells by toggling an erasure status value without otherwise affecting a written state of the cells in the block. The memory cells are subsequently overwritten with a set of data using a write polarity direction determined responsive to the toggled erasure status value.

Soft erasure of memory cells

The present invention is generally directed to an apparatus with embedded (bottom side) control lines for vertically stacked semiconductor elements. In accordance with various embodiments, a first semiconductor wafer is provided with a first facing surface on which a first conductive layer is formed. The first semiconductor wafer is attached to a second semiconductor wafer to form a multi-wafer structure, the second semiconductor wafer having a second facing surface on which a second conductive wafer is formed. The first conductive layer is contactingly bonded to the second conductive layer to form an embedded combined conductive layer within said structure. Portions of the combined conductive layer are removed to form a plurality of spaced apart control lines that extend in a selected length or width dimension through said structure.

Patterning embedded control lines for vertically stacked semiconductor elements

A method and apparatus for reading data from a non-volatile memory cell. In some embodiments, a cross-point array of non-volatile memory cells is arranged into rows and columns. A selection circuit is provided that is capable of activating the first block of memory cells while deactivating the second block of memory cells. Further, a read circuit is provided that is capable of reading a logical state of a predetermined memory cell in the first block of memory cells with a reduced leak current by programming a first resistive state to the block selection elements corresponding to the first block of memory cells while programming a second resistive state to the block selection elements corresponding to the second block of memory cells.

Hierarchical cross-point array of non-volatile memory

A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.

Non-volatile memory cell with programmable unipolar switching element

Apparatus and method for decoding addresses of control lines in a semiconductor device, such as a solid state memory (SSM). In accordance with some embodiments, a switching circuit includes an array of switching devices coupled to 2output lines and M input lines, wherein M and N are respective non-zero integers and each output line has a unique N-bit address. A decoder circuit coupled to the switching circuit divides the N-bit address for a selected output line into a plurality of multi-bit subgroup addresses, and asserts the M input lines in relation to respective bit values of said subgroup addresses to apply a first voltage to the selected output line and to concurrently apply a second voltage to the remaining 2&#x2212;1 output lines.

Semiconductor control line address decoding circuit

A non-volatile memory cell and method of use thereof. In some embodiments, an individually programmable resistive sense memory (RSM) element is connected in series with a programmable metallization cell (PMC) switching element. In operation, while the switching element is programmed to a first resistive state, no current passes through the RSM element and while a second resistive state is programmed to the RSM element, current passes through the RSM element.

Non-volatile memory cell stack with dual resistive elements

A semiconductor device for accessing non-volatile memory cell is provided. In some embodiments, the semiconductor device has a vertical stack of semiconductor layers including a source, a drain, and a well. An application of a drain-source bias voltage to the semiconductor device generates a punchthrough mechanism across the well to initiate a flow of current between the source and the drain.

Vertical non-volatile switch with punchthrough access and method of fabrication therefor

An anti-parallel diode structure and method of fabrication is presently disclosed. In some embodiments, an anti-parallel diode structure has a semiconductor region comprising a first insulator layer disposed between a first semiconductor layer and a second semiconductor layer. The semiconductor region can be bound on a first side by a first metal material and bound on a second side by a second metal material so that current below a predetermined value is prevented from passing through the semiconductor region and current above the predetermined value passes through the semiconductor region.

Anti-parallel diode structure and method of fabrication

A method and apparatus for reading data from a non-volatile memory cell. In some embodiments, a cross-point array of non-volatile memory cells is arranged into rows and columns that are each controlled by a line driver. A read circuit is provided that is capable of reading a logical state of a predetermined memory cell by differentiating a non-integrated first reference value from a non-integrated second reference value. Further, each reference value is measured immediately after configuring the column corresponding to the predetermined memory cell to produce a first and second amount of current.

Growing community of inventors

Eden Prairie, MN, United States of America

Youngpil Kim