Samsung Electronics Co., Ltd.

Dong-a Pharm. Co., Ltd.

Youngmoon Choi

Shigenobu Maeda

Dongwoo Kim

Jae Hyun Park

Daewon Ha

Kyungin Choi

Changhwa Kim

Sungil Park

Chang Woo Sohn

Doyoung Choi

Soon Hoe Kim

Choon W Lee

Changjae Yang

Moohi Y Kim

Hyun T Shin

Joon W Kim

Moon H Son

A semiconductor device includes: an active pattern extending in a first direction on a substrate; a first lower source/drain pattern and a second lower source/drain pattern provided on the active pattern and spaced apart from each other in the first direction; a first upper source/drain pattern provided on the first lower source/drain pattern; a second upper source/drain pattern provided on the second lower source/drain pattern; and a gate electrode crossing the active pattern and extending in a second direction intersecting the first direction. The gate electrode includes an overlapping portion overlapping the active pattern in a third direction perpendicular to the first direction and the second direction. A length of the overlapping portion in the second direction is less than a length of the first lower source/drain pattern in the second direction.

Semiconductor device

A method for manufacturing a semiconductor device includes forming a fin structure extending in a first direction on a substrate, forming a sacrificial gate pattern extending in a second direction to intersect the fin structure, forming a gate spacer layer covering the fin structure and the sacrificial gate pattern, providing a first ion beam having a first incident angle range and a second ion beam having a second incident angle range to the substrate, patterning the gate spacer layer using the first ion beam and the second ion beam to form gate spacers on sidewalls of the sacrificial gate pattern, forming source/drain regions at both sides of the sacrificial gate patterns, and replacing the sacrificial gate pattern with a gate electrode.

Method for manufacturing a semiconductor device

According to an exemplary embodiment of the present embodiment, a semiconductor device is provided as follows. An active fin protrudes from a substrate, extending in a direction. A gate structure crosses a first region of the active fin. A source/drain is disposed on a second region of the active fin. The source/drain includes upper surfaces and vertical side surfaces. The vertical side surfaces are in substantially parallel with side surfaces of the active fin.

Semiconductor devices having source/drain and method of fabricating the same

A benzoxazine or benzothiazine derivative of the formula (A), ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 are the same or different and represent a hydrogen atom or a C.sub.1-4 alkyl group; or R.sub.1 and R.sub.2 can be joined together along with the imidazole ring to form a benzimidazole; X and Y are the same or different and represent an oxygen or sulfur atom; or a pharmaceutically acceptable salt thereof, exhibits an excellent inotropic effect and can be used as a cardiac stimulant.

Imidazole substituted benzoxazine or benzothiazine derivatives

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Seoul, South Korea

Youngmoon Choi