Samsung Electronics Co., Ltd.

Youngmok Kim

Yongsang Jeong

Kyunglyong Kang

Kyungmin Kim

Minjung Kim

Yongkyu Lee

Boyoung Seo

Hyelin Lee

Dahee Lim

ChangMin Jeon

Kyoung-Eun Uhm

Jun-Gu Kang

Yunsu Ok

Jungu Kang

Yeonkwang Lee

Sungmin Kang

Minhee Uh

Hodae Oh

An electronic device according to various embodiments of the present disclosure may comprise: a display which can be expanded or reduced; at least one sensor; and a processor, wherein the processor is configured to: identify whether an input is received; based on identifying that an input has been received, identify whether the display is expanded or reduced within a given period of time, using the at least one sensor; and based on identifying that expansion or reduction of the display is started within the given period of time, execute a specified function corresponding to the identified input.

Electronic device including expandable display and operation method thereof

A semiconductor device includes: a cell area including a cell substrate, a memory cell array, and a first bonding metal pad on the memory cell array, the memory cell array including a plurality of word lines stacked on the cell substrate and a plurality of bit lines on the plurality of word lines; and a peripheral circuit area having the cell area stacked thereon and including a peripheral circuit substrate, a plurality of circuits on the peripheral circuit substrate, and a second bonding metal pad bonded to the first bonding metal pad, wherein the plurality of circuits include: a plurality of planar channel transistors respectively including a channel along a top surface of the peripheral circuit substrate; and at least one recess channel transistor including a channel along a surface of a recess trench arranged in the peripheral circuit.

Semiconductor device and electronic system including the same

A display apparatus includes a display panel; and a display driver integrated circuit (DDI) chip coupled to the display panel, the DDI chip being configured to generate a display driving signal for driving the display panel based on image data. The DDI chip may include: a first embedded memory device embedded in the DDI chip and configured to store compensation data for compensating for electrical and optical characteristics of a plurality of pixels included in the display panel; a timing controller configured to control signals for driving the display panel, and to generate a data control signal based on the image data and the compensation data; and a data driver configured to provide a data voltage to the display panel according to the data control signal. The first embedded memory device may not include static random access memory (SRAM).

Display driver integrated circuit (DDI) chip and display apparatus

A semiconductor device includes a substrate, in which a lower semiconductor layer, an insulating gapfill layer, and an upper semiconductor layer are sequentially stacked. A gate structure is disposed on the upper semiconductor layer. A source/drain electrode is disposed on a sidewall of the gate structure. A semiconductor pattern is disposed between the source/drain electrode and the upper semiconductor layer. The gate structure includes a gate electrode and a spacer structure. The spacer structure includes a first spacer pattern, a second spacer pattern, and a third spacer pattern, sequentially disposed on a sidewall of the gate electrode. The semiconductor pattern is extended to a region below a bottom surface of the third spacer pattern and is connected to the second spacer pattern.

Semiconductor device including a field effect transistor

A method for manufacturing a semiconductor device includes forming a device isolation layer in a substrate to define an active region, forming a gate insulating layer covering at least a portion of the active region, forming a gate electrode on the gate insulating layer, and forming an interlayer insulating layer on the gate electrode. The gate insulating layer includes a first portion overlapping with the active region and a second portion overlapping with the device isolation layer. The forming of the gate insulating layer includes etching at least a part of the second portion of the gate insulating layer to thin the part of the second portion of the gate insulating layer.

Method for manufacturing semiconductor device

Growing community of inventors

Yongin-si, South Korea

Youngmok Kim