Samsung Electronics Co., Ltd.

Youngmin Ko

Jaeho Jung

Jonguk Kim

Dongsung Choi

Kwangmin Park

Miyoung Yoo

Ara Cho

Mooserk Park

Jeahwan Go

Changjoo Chai

A method for manufacturing a semiconductor device includes forming a first pattern structure having a first opening on a lower structure comprising a semiconductor substrate. The first pattern structure includes a stacked pattern and a first spacer layer covering at least a side surface of the stacked pattern. A first flowable material layer including a SiOCH material is formed on the first spacer layer to fill the first opening and cover an upper portion of the first pattern structure. A first curing process including supplying a gaseous ammonia catalyst into the first flowable material layer is performed on the first flowable material layer to form a first cured material layer that includes water. A second curing process is performed on the first cured material layer to form a first low-k dielectric material layer. The first low-k dielectric material layer is planarized to form a planarized first low-k dielectric material layer.

Method for manufacturing a semiconductor device including a low-k dielectric material layer

An electronic apparatus and a controlling method thereof are provided. A server apparatus communicatively connected with a plurality of electronic apparatuses constituting an internet of things (IoT) includes a communication interface, and a processor configured to, based on receiving a request of a service from an application executed in a user terminal apparatus being received through the communication interface, determine data corresponding to the request and an electronic apparatus for receiving the data among the plurality of electronic apparatuses, determine a time cycle for receiving the data from the electronic apparatus based on the service, control the communication interface to transmit a request for transmitting the data according to the time cycle to the electronic apparatus, and based on receiving the data from the electronic apparatus at an interval of the time cycle through the communication interface, provide the service based on the received data.

Server apparatus and controlling method thereof

A method of fabricating a memory device includes forming word lines and cell stacks with gaps between the cell stacks, forming a lower gap-fill insulator in the gaps, forming an upper gap-fill insulator on the lower gap-fill insulator, curing the lower gap-fill insulator and the upper gap-fill insulator to form a gap-fill insulator, and forming bit lines on the cell stacks and the gap-fill insulator. The lower gap-fill process may be performed using a first source gas that includes first and second precursors, and the upper gap-fill process may be performed using a second source gas that includes the first and second precursors, a volume ratio of the first precursor to the second precursor in the first source gas may be greater than 15:1, and a volume ratio of the first precursor to the second precursor in the second source gas may be less than 15:1.

Method of fabricating semiconductor devices using a two-step gap-fill process

Growing community of inventors

Hwaseong-si, South Korea

Youngmin Ko