Samsung Electronics Co., Ltd.

Youngman Ahn

Jonggeon Lee

Sangyeol Lee

A method and a memory device for testing and repairing memory cells during a power-up sequence are provided. The memory device includes a built-in self test (BIST) unit for testing a memory cell array during the power-up sequence. The BIST unit performs a test on the memory cell array in response to a power stabilization signal, or performs a test on the memory cell array in response to an impedance control (ZQ) calibration command. The BIST unit terminates a test being performed in response to a write leveling command, or terminates a test being performed in response to an active command.

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Hwaseong-si, South Korea

Youngman Ahn