Samsung Electronics Co., Ltd.

Younglim Park

Jungmin Park

Haeryong Kim

Hanjin Lim

Cheoljin Cho

Intak Jeon

A semiconductor device of the disclosure includes a substrate, a capacitor contact structure electrically connected to the substrate, a lower electrode connected to the capacitor contact structure, a capacitor insulating layer covering the lower electrode, and an upper electrode covering the capacitor insulating layer. The upper electrode includes a multiple layer on the capacitor insulating layer, and a cover layer on the multiple layer. The multiple layer includes a first electrode layer, a second electrode layer, and a first metal silicide layer between the first and second electrode layers. A work function of the first metal silicide layer is greater than a work function of the first electrode layer and a work function of the second electrode layer.

Semiconductor device including capacitor structure and method for manufacturing the same

An integrated circuit device including a first electrode layer including a first metal and having a first thermal expansion coefficient; a dielectric layer on the first electrode layer, the dielectric layer including a second metal oxide including a second metal that is different from the first metal, and having a second thermal expansion coefficient that is less than the first thermal expansion coefficient; and a first stress buffer layer between the first electrode layer and the dielectric layer, the first stress buffer layer including a first metal oxide including the first metal, and being formed due to thermal stress of the first electrode layer and thermal stress of the dielectric layer.

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Anyang-si, South Korea

Younglim Park