Wooree Lst Co. Ltd.

Youngkyn Noh

Jae-Eung Oh

The present invention relates to a nitride semiconductor light emitting device using a hybrid buffer layer and a method for fabricating the same which can minimize the lattice mismatch between a buffer layer and a nitride semiconductor. The method for fabricating the nitride semiconductor light emitting device using the hybrid buffer layer includes a first step of forming an AlGaN(0&#x2266;x&#x3c;1) layer on a substrate, a second step of forming a three-dimensional crystal seed layer made of a material included in a general formula of AlGaN(0&#x2266;x&#x3c;1) and AlONon the substrate by recrystallizing the substrate with the AlGaN(0&#x2266;x&#x3c;1) layer thereon, and a third step of forming an AlN nanostructure by annealing the substrate subjected to the second step at NHgas atmosphere, thus forming a hybrid buffer layer composed of the three-dimensional crystal seed layer and the AlN nanostructure on the substrate.

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Daejeon, South Korea

Youngkyn Noh