Samsung Electronics Co., Ltd.

Youngkug Moon

Wonseok Lee

Dong Hwi Kim

Eun-Jin Yun

Taek-Sung Kim

Seongsik Hwang

Donghyun Sohn

Seonghyun Jeon

A method is provided for controlling a write operation in a nonvolatile memory device to provide wear leveling, where the nonvolatile memory device includes multiple memory blocks. The method includes reading write indication information with respect to at least a selected memory block of the multiple memory blocks; determining whether a write order of data to be stored in the selected memory block is an ascending order or a descending order, based on the write indication information of the selected memory block; and generating addresses of memory regions in the selected memory block in an ascending order when the write order of the data is determined to be an ascending order, and generating addresses of the memory regions in the selected memory block in a descending order when the write order is determined to be a descending order.

Nonvolatile memory device having wear-leveling control and method of operating the same

A semiconductor memory device includes a memory cell array of nonvolatile memory cells having a variable resistance element, and a conductor line array capable of generating a compensation magnetic field for the nonvolatile memory cells. A current driver selectively supplies current to conductive lines, a magnetic field sensor senses an applied external magnetic field and generates external magnetic field information, and a controller controls generation of the compensation magnetic field in response to the external magnetic field information.

Semiconductor memory device having variable resistance memory and operating method

A memory system is provided, which includes a nonvolatile memory module including a plurality of nonvolatile memory devices, and a memory module controller configured to control the nonvolatile memory module. At least two nonvolatile memory devices of the plurality of nonvolatile memory devices are configured to store serial presence detect (SPD) information. The memory module controller is configured to read the SPD information from the nonvolatile memory module and to set a communication mode with the nonvolatile memory module based on the read SPD information.

Nonvolatile memory module, memory system including nonvolatile memory module, and controlling method of nonvolatile memory module

A nonvolatile memory is provided which includes a memory cell array including a plurality of nonvolatile memory cells; a decoder connected with the memory cell array through a plurality of word lines; a data input/output circuit connected with the memory cell array through a plurality of bit lines; a voltage detector configured to detect a variation in a power supply voltage to output a voltage variation signal; and control logic configured to control the decoder and the data input/output circuit such that data stored at the memory cell array is invalidated in response to the voltage variation signal.

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Suwon-si, South Korea

Youngkug Moon