Samsung Display Co., Ltd.

Youngki Shin

Yoonho Khang

Myounggeun Cha

Seung-Hwan Cho

Woonghee Jeong

Sun Hee Lee

Hyungjun Kim

Sangho Park

Donghwan Shim

Chong Sup Chang

Hyunjae Na

Su-Hyoung Kang

Kyoungwon Lee

Changoh Jeong

Honglong Ning

Joonhwa Bae

Sehwan Yu

Jinho Hwang

Seohong Jung

A transistor including a polysilicon layer on a base substrate and including a channel region, a first ion doping region, a second ion doping region, the channel region being between the first and second ion doping regions, an average size of the grains in the channel region being greater than that of the grains in the first and second ion doping regions, a first gate electrode insulated from and overlapping the channel region, a second gate electrode insulated from the first gate electrode and overlapping the channel region, an inter-insulating layer on the second gate electrode, a source electrode on the inter-insulating layer and connected to the first ion doping region, and a drain electrode on the inter-insulating layer and connected to the second ion doping region.

Transistor, organic light emitting display having the same, and method of manufacturing organic light emitting display

Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.

Thin film transistor substrate, display apparatus including the same, method of manufacturing thin film transistor substrate, and method of manufacturing display apparatus

A display panel includes a base substrate including a pixel area and a peripheral area, a semiconductor layer disposed on a portion of the base substrate, a display element disposed in the pixel area, and a thin film transistor which controls the display element and includes an input electrode, an output electrode and a control electrode, in which the semiconductor layer includes a first portion disposed on the input electrode of the first thin film transistor, a second portion disposed on the output electrode of the first thin film transistor, and a third portion which connects the first portion and the second portion, overlaps the control electrode of the first thin film transistor, and defines a channel of the first thin film transistor.

Display panel

A wire is provided on an insulating substrate to have a first thickness in a first area and a second thickness smaller than the first thickness in a second area except for the first area. A display apparatus includes the wire. The wire is formed by forming a first conductive layer and a second conductive layer on the insulating substrate and etching the first and second conductive layers using photoresist layer patterns having different thicknesses.

Wire, method of manufacture, and related apparatus

A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer.

Thin film transistor, method of fabricating the same, and display apparatus having the same

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Hwaseong-si, South Korea

Youngki Shin