Globalwafers Co., Ltd.

YoungJung Lee

Richard Joseph Phillips

Carissima Marie Hudson

Robert Wendell Standley

JaeWoo Ryu

HyungMin Lee

JunHwan Ji

UiSung Jung

WonJin Choi

ChanRae Cho

JungHan Kim

A method is disclosed for reducing the size and density of defects in a single crystal silicon wafer. The method involves subjected a single crystal silicon ingot to an anneal prior to wafer slicing.

Method of treating a single crystal silicon ingot to improve the LLS ring/core pattern

Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.

Sample rod growth and resistivity measurement during single crystal silicon ingot production

Methods for determining the resistivity of a polycrystalline silicon melt

Growing community of inventors

Chungcheongnam-do, South Korea

YoungJung Lee