Samsung Electronics Co., Ltd.

Youngjun Hwang

Geunyeong Yu

Hongrak Son

Bohwan Jun

Hong Rak Son

Dongmin Shin

Kangseok Lee

Dong-Min Shin

Daeyeol Yang

Heeyoul Kwak

Dae-Yeol Yang

Kijun Jeon

Kyoungbin Park

Junjin Kong

Kijun Lee

Jisoo Kim

Changkyu Seol

Sunghye Cho

Sangkwon Moon

Hyunkyo Oh

Seonghyeog Choi

Woohyun Kang

Junho Shin

Wijik Lee

Kyeongcheol Yang

Hyunseung Han

Garam Kim

Jin Gu Jeong

Seona Won

Minki Song

Dong-min Shin

Gibeom Park

Jaeyong Son

An operating method of a storage device, the storage device including a page type table, a parity table, and a non-volatile memory device, and the method including receiving a write request of first data from a host device, generating a first inside parity and a first outside parity, based on the first data, storing the first outside parity in the parity table, obtaining first reliability type information of a first page for storing the first data, by referring to the page type table, generating a first flexible parity, based on the first inside parity and the first reliability type information, generating first encoding data, based on the first data and the first flexible parity, and storing the first encoding data in the non-volatile memory device.

Storage devices configured to generate parity based on reliability, and methods of operation of the same

An LDPC encoder is described with memory for storing a parity check matrix and a calculation unit to encode information bits into a codeword with reference to the parity check matrix. The parity check matrix includes an information part matrix and a parity part matrix. In the parity part matrix, Z*Z sub-matrices are sub-matrices, other than a zero matrix, and are arranged in each of the m rows and m columns. A sub-matrix is a scaled cyclic matrix obtained by shifting elements of an identity matrix by one to the left and multiplying the shifted elements by a scaling element. Except for the scaled cyclic matrix, the remaining sub-matrices are a zero matrix or an identity matrix, and the scaling element is an element allowing the parity part matrix to satisfy a full rank condition on a Galois field.

Encoder and encoding method

A storage device according to an embodiment includes a memory device configured to apply a first program voltage and a first verification voltage to a first word line and output, based on a program state of each of a plurality of memory cells connected to the first word line, a speed information representing a speed characteristic of each of the plurality of memory cells; and a memory controller configured to determine at least one memory cell to be programmed into a predetermined program state; determine, among the at least one memory cell, at least one target memory cell having a first speed characteristic based on the speed information; and perform a state-shaping operation to convert a data corresponding to the predetermined program state for the at least one target memory cell into a value corresponding to a program state different from the predetermined program state.

Storage device for performing a state shaping operation on data based on a speed characteristic of a memory cell and operation method thereof

A semiconductor device may include an error correcting code (ECC) encoder that encodes a codeword based on a parity check matrix and generates the encoded codeword including an information bit and a parity bit. The parity check matrix is divided into an information part corresponding to the information bit and a parity part corresponding to the parity bit. The parity part includes a block matrix T including a plurality of first sub-matrices arranged in a dual diagonal structure, a block matrix B including a first sub-matrix and a (1−a)-th sub-matrix, a block matrix D composed of a first sub-matrix, and a block matrix E including a first sub-matrix and a masked (1−(a+1))-th sub-matrix. A location where the first sub-matrix is placed in the block matrix B precedes a location where the masked (1−(a+1))-th sub-matrix is placed in the block matrix E.

Error correcting code encoding circuit and semiconductor device including the same

A generalized low-density parity-check (G-LDPC) encoder, including a plurality of generalized constraint (GC) encoders configured to perform a plurality of GC encoding operations in parallel based on a GC code having a quasi-cyclic (QC) structure including information variable nodes, inner parity variable nodes, and super check nodes configured to perform multiple condition checks, wherein each GC encoder of the plurality of GC encoders includes a plurality of first logic circuits configured to perform a GC encoding operation of the plurality of GC encoding operations; and an LDPC encoder configured to perform an LDPC encoding operation based on an LDPC code having the QC structure, wherein the LDPC encoder includes a plurality of single check nodes configured to perform a single parity check, wherein the each GC encoder is configured to receive information bits, and to determine parity bits of a portion of inner parity bits corresponding to the information bits by enabling only a portion of the plurality of first logic circuits to perform the GC encoding operation, and wherein the LDPC encoder is configured to: obtain the inner parity bits by combining the parity bits obtained from the plurality of GC encoders, determine outer parity bits corresponding to the information bits and the inner parity bits by performing the LDPC encoding operation, and output the information bits, the inner parity bits, and the outer parity bits as a codeword.

Generalized LDPC encoder, generalized LDPC encoding method and storage device

a G-LDPC decoder is provided. The G-LDPC decoder includes: a generalized check node decoder configured to, in each of a plurality of iterations: group connected variable nodes into groups, the connected variable nodes being connected to an mgeneralized check node among generalized check nodes; generate test patterns in each of one or more of the groups based on a first message received by the mgeneralized check node from the connected variable nodes; and identify a value of a second message to be provided from the mgeneralized check node to the connected variable nodes based on the test patterns; and a LDPC decoder circuitry configured to, in each of the iterations, update a value of an nvariable node, among the variable nodes, based on the second message received by the nth variable node from a generalized check node that is connected to the nth variable node.

G-LDPC decoder and G-LDPC decoding method

Various example embodiments of the inventive concepts provide an error correction circuit and a semiconductor device. The error correction circuit includes clock-sync distributor circuitry configured to output a plurality of distributor output data based on distributor reception data received using a first clock signal, each of the plurality of distributor output data output based on the first clock signal or a second clock signal, the second clock signal having a higher frequency than a frequency of the first clock signal, a node processor configured to generate a plurality of output data by performing error correction decoding using the plurality of distributor output data, output a first subset of the plurality of output data based on the first clock signal, and output a second subset of the plurality of output data based on the second clock signal, and clock-sync combiner circuitry configured to output, based on the first clock signal, the plurality of output data received from the node processor.

Error correction circuit using multi-clock and semiconductor device including the same

In a method of error correction code (ECC) decoding, normal read data are read from a nonvolatile memory device based on normal read voltages, and a first ECC decoding is performed with respect to the normal read data. When the first ECC decoding results in failure, flip read data are read from the nonvolatile memory device based on flip read voltages corresponding to a flip range of a threshold voltage. Corrected read data are generated based on the flip read data by inverting error candidate bits included in the flip range among bits of the normal read data, and a second ECC decoding is performed with respect to the corrected read voltage. Error correction capability may be enhanced by retrying ECC decoding based on the corrected read data when ECC decoding based on the normal read data results in failure.

Method of error correction code (ECC) decoding and memory system performing the same

A low density parity check (LDPC) decoder initializing variable nodes with a value of a codeword and outputting the updated variable nodes as decoded messages with reference to an irregular parity check matrix. The LDPC decoder includes a plurality of unit logic circuits operating in a single mode in which all the unit logic circuits update one variable node group including at least one variable node, or a multi-mode in which each of the unit logic circuits updates a plurality of variable node groups in parallel by updating different variable nodes, and a mode controller controlling the plurality of unit logic circuits to update a high-degree variable node group having a degree greater than a threshold degree among the variable node groups in the single mode, and update a low-degree variable node group having a degree less than or equal to the threshold degree among the variable node groups in the multi-mode.

Low density parity check decoder and storage device

A method of responding to a read request from a host includes: obtaining read data from a memory device, performing first iteration ECC decoding on the read data to generate a plurality of pieces of decoded data, selecting one of the plurality of pieces of decoded data as intermediate data as intermediate data, generating preprocessed data based on the read data and the intermediate data and performing second iteration ECC decoding on the preprocessed data when the first iteration ECC decoding fails, and outputting the intermediate data to the host when the first iteration ECC decoding succeeds.

Error correction code engine performing ECC decoding, operation method thereof, and storage device including ECC engine

A memory device includes a cell array including a plurality of pages and a control logic configured to control program and read operations of the cell array. The control logic controls the program and read operations to store first through N-th codewords in a first page among the pages and program a page parity corresponding in common to the first through N-th codewords to the first page in response to a program command for a page unit and to selectively read the first codeword among the first through N-th codewords in response to a read command for a sub-page unit, where N is an integer of at least 2. The first codeword includes first sub-page data and a first sub-parity corresponding thereto, and the first sub-parity includes information for correcting an error in the first sub-page data through error correction code (ECC) decoding independently performed on each codeword.

Memory device storing parity and memory system including the same

An error check code (ECC) decoder includes a buffer, a data converter and a decoding circuit. The buffer stores a plurality of read pages read from a plurality of multi-level cells connected to a same wordline. The data converter adjusts reliability parameters of read bits of the plurality of read pages based on state-bit mapping information and the plurality of read pages to generate a plurality of ECC input data respectively corresponding to the plurality of read pages. The state-bit mapping information indicate mapping relationships between states and bits stored in the plurality of multi-level cells. The decoding circuit performs an ECC decoding operation with respect to the plurality of read pages based on the plurality of ECC input data. An error correction probability is increased by adjusting the reliability parameters of read bits based on the state-bit mapping information.

Error check code (ECC) decoder and memory system including ECC decoder

A storage device includes a nonvolatile memory device that includes a plurality of pages, each of which includes a plurality of memory cells, and a controller that receives first write data expressed by 2states (m being an integer greater than 1) from an external host device. The controller in a first operating mode shapes the first write data to second write data, which are expressed by 'k' states (k being an integer greater than 2) smaller in number than the 2states, performs first error correction encoding on the second write data to generate third write data expressed by the 'k' states, and transmits the third write data to the nonvolatile memory device for writing at a selected page from the plurality of pages.

Storage device that performs state shaping of data

An error correction device includes a low density parity check (LDPC) decoder and an adaptive decoding controller. The LDPC decoder iteratively performs LDPC decoding on data by using a decoding parameter. The adaptive decoding controller calculates an error rate depending on a result of the LDPC decoding and adjusts the decoding parameter depending on the error rate.

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Hwaseong-si, South Korea

Youngjun Hwang