Lg Display Co., Ltd.

Youngju Koh

Ryosuke Tani

Woojin Nam

Byungchul Ahn

Sungjin Hong

Mungi Park

Sungsoo Kim

Woojung Byun

Dongyoon Lee

Kwangyong Choi

Jaeyoung Oh

Disclosed is a display device including a substrate including a plurality of sub-pixels, each of the plurality of sub-pixels including a light emitting area, a first planarization film on the substrate, an ashing stop film on the first planarization film, a second planarization film on the ashing stop film and including a micro lens array that overlaps the light-emitting area, and a first electrode on the second planarization film and an exposed face of the micro lens array.

Display device including a micro lens array

Provided is an organic light-emitting diode (OLED) display device. The OLED display device includes a substrate in which a pixel area and a non-pixel area are defined, a power line formed on the substrate, at least one insulating film covering the power line, a light-emitting element formed on the insulating film, a connection electrode connected to the power line and formed to extend along an upper surface of the insulating film, and a passivation film having a contact hole through which a portion of the connection electrode is exposed within the non-pixel area. The light-emitting element includes a first electrode, an emissive layer, and a second electrode that are sequentially stacked. The second electrode is in direct contact with the connection electrode within the contact hole.

Organic light-emitting diode display device and method of manufacturing same

A method for manufacturing an organic light emitting diode (OLED) display can include forming a gate electrode on a substrate, forming a semiconductor layer by depositing a gate insulating layer and an oxide semiconductor material and patterning the oxide semiconductor material, forming an etch stopper on a central portion of the semiconductor layer, conducting a plasma treatment using the etch stopper as a mask to conductorize portions of the semiconductor layer exposed by the etch stopper for defining a channel area, a source area and a drain area, and forming a source electrode contacting portions of the conductorized source area and a drain electrode contacting portions of the conductorized drain area.

Organic light emitting diode display having thin film transistor substrate using oxide semiconductor

Provided is a thin film transistor having an oxide semiconductor material for an organic light emitting diode display and a method for manufacturing the same. The organic light emitting diode display includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; a semiconductor layer formed on the gate insulating layer to overlap with the gate electrode, and including a channel area and source and drain areas which extend from the channel area to both outsides, respectively and are conductorized; an etch stopper formed on the channel area and exposing the source area and the drain area; a source electrode contacting portions of the exposed source electrode; and a drain electrode contacting portions of the exposed drain electrode.

A liquid crystal display (LCD) includes: a gate line formed as a first conductive pattern; a common line formed as the first conductive pattern; a data line insulatedly crossing the gate line and the common line, and formed as a second conductive pattern; a thin film transistor (TFT) formed at a crossing of the gate line and the data line; a common electrode formed as a third conductive pattern, and connected with the common line; and a pixel electrode connected with the TFT and formed as the third conductive pattern to form a horizontal field together with the common electrode, wherein the third conductive pattern is formed as a dual-layer comprising a metal film and a low reflection film formed on the metal film.

Growing community of inventors

Paju-si, South Korea

Youngju Koh