Stats Chippac Pte. Ltd.

YoungJoon Kim

SungWon Cho

Ki Youn Jang

JoonYoung Choi

Sangmi Park

YongHyuk Jeong

DaeSik Choi

Soo-San Park

KyungOe Kim

JoHyun Bae

YoRim Lee

DaeSup Kim

HyunSoo Shin

A semiconductor wafer has a plurality of semiconductor die with contact pads for electrical interconnect. An insulating layer is formed over the semiconductor wafer. A bump structure is formed over the contact pads. The bump structure has a buffer layer formed over the insulating layer and contact pad. A portion of the buffer layer is removed to expose the contact pad and an outer portion of the insulating layer. A UBM layer is formed over the buffer layer and contact pad. The UBM layer follows a contour of the buffer layer and contact pad. A ring-shaped conductive pillar is formed over the UBM layer using a patterned photoresist layer filled with electrically conductive material. A conductive barrier layer is formed over the ring-shaped conductive pillar. A bump is formed over the conductive barrier layer. The buffer layer reduces thermal and mechanical stress on the bump and contact pad.

Semiconductor device and method of forming bump structure with insulating buffer layer to reduce stress on semiconductor wafer

A method of manufacture of an integrated circuit packaging system includes: providing a first substrate; mounting an integrated circuit structure on the first substrate; mounting a second substrate on the integrated circuit structure; coupling a vertical chip to the first substrate and to the second substrate; and forming a package body for encapsulating the integrated circuit structure, the vertical chip, and a portion of the second substrate.

Integrated circuit packaging system with chip stacking and method of manufacture thereof

A semiconductor device has a first conductive layer formed over a first substrate. A second conductive layer is formed over a second substrate. A first semiconductor die is mounted to the first substrate and electrically connected to the first conductive layer. A second semiconductor die is mounted to the second substrate and electrically connected to the second conductive layer. The first semiconductor die is mounted over the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and the first and second substrates. A conductive interconnect structure is formed through the encapsulant to electrically connect the first and second semiconductor die to the second surface of the semiconductor device. Forming the conductive interconnect structure includes forming a plurality of conductive vias through the encapsulant and the first substrate outside a footprint of the first and second semiconductor die.

Semiconductor device and method of forming stacked semiconductor die and conductive interconnect structure through an encapsulant

A method of manufacture of an integrated circuit packaging system includes: providing a substrate; attaching an integrated circuit device to the substrate; forming a stud interconnect having stacked studs, the stud interconnect on the substrate and having a contact surface and a crown surface on an end of the stud interconnect opposite the substrate; applying an encapsulation over the integrated circuit die, over the stud interconnect, and over the substrate; and forming a cavity in the encapsulation over the stud interconnect, the contact surface and the crown surface exposed in the cavity.

Integrated circuit packaging system with stacked lead and method of manufacture thereof

A mountable integrated circuit package system comprising: mounting a first integrated circuit device over a package carrier; mounting an interposer including a central aperture over the package carrier, an intra-stack interconnect connected between the interposer and the package carrier, and the first integrated circuit device within the central aperture; and forming an intra-stack encapsulation over the package carrier and surrounding the interposer.

Mountable integrated circuit package system with intra-stack encapsulation

Methods for fabricating flip-chips are disclosed. In an exemplary method, a flip-chip is mounted, active-surface downward, onto a substrate such that a back-side of the flip-chip is facing upward and electrical connections are made between the chip and an upward-facing surface of the substrate. An adhesive is applied to selected regions not occupied by the flip-chip. A heat-spreader is applied to contact the applied adhesive without contacting the back-side of the flip-chip, leaving a gap between the heat-spreader and the back-side of the flip-chip. The heat-spreader defines at least one through-hole that, when the heat-spreader is placed, is within a perimeter of the flip-chip. The adhesive is cured, and a thermal-insulating material (TIM) is applied through the at least one through-hole so as to fill the gap with the TIM. The methods substantially reduce the probability of die damage that otherwise occurs during attachment of heat-spreaders.

Methods for manufacturing thermally enhanced flip-chip ball grid arrays

A method of manufacture of an integrated circuit packaging system includes: providing a substrate having a substrate cavity; mounting a bottom flip chip die below the substrate; mounting an internal integrated circuit die above the substrate; filling between the internal integrated circuit die and the substrate and between the bottom flip chip die and the substrate with a substance filling through the substrate cavity; and encapsulating the internal integrated circuit die with an encapsulation.

Integrated circuit packaging system using bottom flip chip die bonding and method of manufacture thereof

A package stacking system includes: providing a package substrate; mounting an integrated circuit over the package substrate; forming a step-down interposer over the integrated circuit; and molding a stack package body, having a step profile, on the package substrate and the step-down interposer.

Growing community of inventors

Kyoungki-do, South Korea

YoungJoon Kim