Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Industrial Cooperation Foundation Chonbuk National University

Youngjin Noh

Yongwoo Lee

Dowon Kim

Seungbo Shim

Minyoung Hur

Suk Ho Choi

Chulwoo Park

Jongwoo Sun

Seunghee Lee

Jaehak Lee

Myungsun Choi

Donghyeon Na

Hakyoung Kim

Kyohyeok Kim

Akira Koshiishi

Yunhwan Kim

Sung-Mo Gu

Masato Horiguchi

Changhyun Ryu

Youngwon Kim

Young Eun Choi

Taeil Cho

Chi Youn Chung

Jisoo Im

Disclosed are plasma baffles, substrate processing apparatuses, and substrate processing methods. The plasma baffle comprises a lower ring, an upper ring outside the lower ring in a plan view and extending vertically, and an intermediate ring that extends from the lower ring to the upper ring to form an acute angle with respect to a horizontal direction. The lower ring includes a lower central hole that vertically penetrates a center of the lower ring, and a plurality of lower slits outside the lower central hole and vertically penetrating the lower ring. The intermediate ring provides an intermediate slit that connects an inner lateral surface of the intermediate ring to an outer lateral surface of the intermediate ring. An area ratio of the plurality of lower slits to the lower ring is equal to or greater than about 59%.

Plasma baffle, substrate processing apparatus including the same, and substrate processing method using the same

Electrostatic chucks, plasma processing apparatuses, and methods of fabricating semiconductor devices using the same are provided. The electrostatic chuck includes a chuck base, an upper plate provided on the chuck base, and an inner plate provided between the chuck base and the upper plate. A first diameter of the inner plate is less than a second diameter of the upper plate.

Electrostatic chuck and plasma processing apparatus including the same

An electrostatic chuck includes a chuck base having a first hole, an upper plate provided on the chuck base, the upper plate having a second hole aligned with the first hole, and an adhesive layer attaching the upper plate to the chuck base, the adhesive layer having a thickness that is less than a diameter of the first hole and equal to a diameter of the second hole.

A plasma processing apparatus includes a chamber, a lower and upper electrodes vertically spaced apart from each other in the chamber, a RF transmitting part connected to the lower electrode and configured to supply RF power to the lower electrode, a ground plate spaced downwardly from the lower electrode, and an insulating member laterally surrounding a cavity formed between the lower electrode and the ground plate. The cavity is isolated from a region under the ground plate by the ground plate.

Plasma processing apparatus and method of manufacturing semiconductor device using the same

An inspection apparatus for detecting a defect of a substrate is provided. The inspection apparatus includes a liquid crystal modulator, a light emitting unit, a beam splitter, and a measurement unit. The liquid crystal modulator includes a reflection layer, a liquid crystal layer, an electrode, and a polarizer. The reflection layer reflects a light. The sensor layer includes a hybrid aligned nematic liquid crystal. The electrode is provided on the liquid crystal layer. The polarizer is provided on the electrode.

Liquid crystal modulator for detecting a defective substrate and inspection apparatus having the same

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Ansan-si, South Korea

Youngjin Noh