Samsung Electronics Co., Ltd.

Youngjin Jeon

Jeongdon Ihm

Jinman Han

Seonkyoo Lee

Kilsoo Kim

HyunJin Kim

Kitae Park

Junho Lee

Joohwan Kim

Jaechul Lee

Youngsub Ko

An example electronic device may include a memory configured to store instructions and a processor electrically connected to the memory and configured to execute the instructions. When the instructions are executed by the processor, the processor may be configured to generate a first suggested-utterance list providable to a user and generate a second suggested-utterance list by extracting, from the first suggested-utterance list, utterances capable of successful execution for a device registered to the user, according to state information about the registered device.

Electronic device and method for providing list of suggested utterances

Memory systems are provided. A memory system may include a plurality of nonvolatile memories and a memory controller configured to control the plurality of nonvolatile memories. Moreover, the memory system may include an input/output buffer circuit connected between the memory controller and the plurality of nonvolatile memories. A data channel may be connected between the memory controller and the input/output buffer circuit, and first and second internal data channels may be connected between the input/output buffer circuit and respective first and second groups of the plurality of nonvolatile memories. The input/output buffer circuit may be configured to connect the data channel to one of the first and second internal data channels.

Memory systems including an input/output buffer circuit

A solid state drive includes a nonvolatile memory, a random access memory, and a memory controller. The nonvolatile memory contains a plurality of nonvolatile memories chips and a buffer chip. The memory controller is formed of an internal bus, a host interface, a memory interface, a buffer control circuit, and a processor.

Solid state driving including nonvolatile memory, random access memory and memory controller

A storage device includes a nonvolatile memory, and a memory controller adapted to control the nonvolatile memory and to transmit a first timing signal to the nonvolatile memory at a read operation. The nonvolatile memory includes a nonvolatile memory device adapted to output read data and a second timing signal in response to the first timing signal, and a retiming circuit adapted to detect a locking delay according to the first timing signal, to produce a third timing signal from the second timing signal using the detected locking delay, to retime the read data by latching the read data in synchronization with the third timing signal and to output the third timing signal and the retimed read data to the memory controller.

Storage device including nonvolatile memory and memory controller and operating method of retiming circuit interfacing communication between nonvolatile memory and memory controller

Growing community of inventors

Hwaseong-si, South Korea

Youngjin Jeon