Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

National Institute for Materials Science

Seoul National University

Samsung Displayco., Ltd.

Youngjin Cho

Yangwan Kim

Soichiro Mizusaki

Joong-Soo Moon

Jinhong Kim

Seyun Kim

Changkyu Jin

Joongsoo Moon

Chan Kwak

Keunsoo Lee

Jisu Na

Doh Won Jung

Hyeon Cheol Park

Minwoo Byun

Jinwoo Kim

Chulkyu Kang

Yongjae Kim

Kwang-Min Kim

Kwanghee Kim

Takayoshi Sasaki

Hongzhong Zheng

Yang Wan Kim

Seung-Kyu Lee

Dimin Niu

Kwangmin Kim

Hyun Sik Kim

Mu-Tien Chang

Woojin Lee

Cheol-Gon Lee

Ki-Seok Oh

Insu Choi

Sungjin Park

Wonkyu Kwak

Jae-young Choi

Jeongho Lee

Sangheon Kim

Hyungjun Kim

Yeunwook Lim

Seungwon Lee

Eunkyung Kim

Jongho Lee

Jongmin Kim

Sungwoo Hwang

Sang Il Kim

Eun Chu Oh

Youngsik Kim

Sujin Jung

Se Yun Kim

Eun-Hyoung Cho

Jungho Yoon

Han-Ju Lee

Youngkwang Yoo

Sungyong Seo

Yumin Kim

Sun-Young Lim

Daejin Yang

Jaegeun Park

Hee Hyun Nam

Yoon Chul Son

Chankyung Kim

Hyunsik Kim

Uksong Kang

JinHyeok Choi

Younggeun Lee

Weonho Shin

Doyoon Kim

Byeongguk Jeon

Kyoung-Seok Moon

Minoru Osada

Kimoon Lee

Cheol Seong Hwang

Sung Woo Hwang

Cheolgon Lee

Jong Wook Roh

Yun Sung Woo

Hyunwoong Kim

Hagyeong Song

Hiesang Sohn

Hee Jung Park

Dongpil Seo

Heehyun Nam

Sanguhn Cha

Seongil O

Younggeon Yoo

Jihoon Choi

Juncheol Shin

Eun-hyoung Cho

Jin-Hyeok Choi

Yongsung Park

Mi Jeong Kim

Soon Suk Hwang

Iksu Jung

Chanho Yoon

Minjeong Kim

Youngin Hwang

Hyeokjun Choe

Woong Ko

Younho Jeon

Jihye Kong

Jaeryong Park

A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer and a second layer. The first layer is formed of a first material. The second layer is on the first layer and formed of a second material having a density different from a density of the first material. The first conductive element and a second conductive element are located on the variable resistance layer and spaced apart from each other in order to form a current path in the variable resistance layer. The current path is in a direction perpendicular to a direction in which the first layer and the second layer are stacked.

Variable resistance memory device

A washing machine includes a cabinet, a tub arranged inside the cabinet, and a washing water treatment apparatus connectable to the tub and configured to circulate water introduced in the tub and discharge the water to an outside of the cabinet. The washing water treatment apparatus includes a case forming an exterior of the washing water treatment apparatus, a filter mountable on an inside of the case and detachable from the inside of the case, a filter blade rotatable inside the filter, a filter driving source to generate power to rotate the filter blade, a drive gear configured to receive the power from the filter driving source and rotate along a first rotation axis, and a filter gear configured to rotate along a second rotation axis at a predetermined angle with respect to the first rotation axis and rotate the filter blade according to a rotation of the drive gear.

Washing machine and clothes treating apparatus

A method for manufacturing a display device includes: forming a first active pattern in a display area; forming a first insulation layer covering the first active pattern; forming a first gate metal pattern including a first gate electrode overlapping the first active pattern; forming a second insulation layer covering the first gate metal pattern; forming a second gate metal pattern overlapping the first gate metal pattern; forming a third insulation layer covering the second gate metal pattern; forming a second active pattern on the third insulation layer; forming a third gate metal pattern including: a second gate electrode overlapping the second active pattern; and a bridge pattern, the bridge pattern being disposed in a peripheral area surrounding the display area; forming a fourth insulation layer covering the third gate metal pattern; and forming a source metal pattern disposed on the fourth insulation layer, the source metal pattern including: a first power wiring pattern; and a second power wiring pattern spaced apart from the first power wiring pattern, wherein the first power wiring pattern and the second power wiring pattern are disposed in the peripheral area contacting the bridge pattern.

Display device and method of manufacturing the same

A display apparatus includes: a first connection electrode layer on a substrate and comprising a horizontal connection line extending in a first direction; and a second connection electrode layer on the first connection electrode layer, comprising a vertical connection line extending in a second direction crossing the first direction and a driving voltage line extending in the second direction, the driving voltage line comprising a protrusion overlapping the horizontal connection line.

Display apparatus

A display device includes a display area and a peripheral area surrounding the display area, a thin film transistor in the display area, a first insulating layer, the first insulating layer covering the thin film transistor, a signal line on the first insulating layer, the signal line being coupled to the thin film transistor, a second insulating layer on the first insulating layer, the second insulating layer covering the signal line, a power supply line in the peripheral area, the power supply line configured to supply power to a pixel circuit including the thin film transistor, and a first dam including a multilayer structure on the power supply line and overlapping at least a part of the power supply line, in which multilayer structure including a lowermost layer including the same material as the second insulating layer, and the lowermost layer is above the power supply line.

Display device with multilayer dams

A display apparatus includes a substrate including a display area, a non-display area adjacent to the display area, and a pad area arranged in the non-display area; a display portion arranged in the display area and including pixels; a pad portion arranged in the pad area and including pads; and an insulating layer overlapping an edge of each of the pads and exposing a central portion of each of the pads, wherein the insulating layer includes at least one opening arranged between adjacent ones of the pads.

A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer including a first material and a second layer on the first layer and the second layer including a second material. The second material has a different valence than a valence of the first material. The first conductive element and the second conductive element are on the variable resistance layer and separated from each other to form an electric current path in the variable resistance layer in a direction perpendicular to a direction in which the first layer and the second layer are stacked.

A display apparatus with improved light emission uniformity includes a pixel. The pixel includes a driving thin-film transistor (TFT); a storage capacitor; a driving semiconductor layer; a first electrode layer; a second electrode layer; a pixel electrode; a pixel-defining layer defining a light-emitting region; and a conductive layer interposed between the first electrode layer and the pixel electrode and including an extending portion that at least partially overlaps the light-emitting region in a plane view to pass over a central portion of the light-emitting region.

An electronic apparatus includes a base substrate having an active area and a peripheral area adjacent to the active area. A plurality of pixels is disposed on the active area. The electronic apparatus also includes a plurality of power lines connected to the pixels. A power pad is disposed on a peripheral area and is configured to receive a power voltage. A power pattern is disposed on the peripheral area and connecting the power lines to the power pad. A plurality of sensing electrodes is disposed on the pixels in the active area. A plurality of sensing pads is disposed on the peripheral area and is electrically connected to the sensing electrodes. The sensing pads overlap with the power pattern.

Electronic apparatus

A display device includes: a base layer including an active area and a non-active area adjacent to the active area; a display circuit layer including a pixel circuit at the active area of the base layer, and a driving circuit at the non-active area, the driving circuit to supply a driving signal to the pixel circuit; and a display element layer on the display circuit layer and including light emitting elements to emit light. The non-active area includes a valley area formed by removing a portion of an organic insulation layer at the display circuit layer, the driving circuit includes a buffer transistor to output the driving signal, and the buffer transistor includes a control electrode and a semiconductor layer overlapping the valley area in a plan view.

Display device including buffer transistor overlapping with valley area in plan view

An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the display includes a plurality of pixel electrodes positioned over a substrate and separate from each other, a plurality of auxiliary wirings between the pixel electrodes, a pixel-defining layer over the pixel electrodes except for a central portion of the pixel electrodes and at least a portion of each of the auxiliary wirings, an intermediate layer over the pixel-defining layer and having a plurality of openings formed over the portion of each of the auxiliary wirings, and an opposite electrode positioned over the intermediate layer and facing the pixel electrodes, the opposite electrode electrically contacting the auxiliary wirings via the openings. The auxiliary wirings extend in a first direction and separate from each other by a first distance. The openings are aligned in a diagonal direction crossing the first direction.

Organic light-emitting diode display and method of manufacturing the same

A storage controller including: a host interface circuit receiving first, second, third and fourth requests corresponding to first, second, third and fourth logical addresses; a memory interface circuit communicating with first nonvolatile memories through a first channel and second nonvolatile memories through a second channel; a first flash translation layer configured to manage the first nonvolatile memories; and a second flash translation layer configured to manage the second nonvolatile memories, the first flash translation layer outputs commands corresponding to the first and fourth requests through the first channel, and the second flash translation layer outputs commands respectively corresponding to the second and third requests through the second channel, and a value of the first logical address is smaller than a value of the second logical address, and a value of the third logical address is smaller than a value of the fourth logical address.

Storage controller and an operation method of the storage controller

A display panel includes a first initialization voltage line in the display area and configured to transmit a first initialization voltage, a second initialization voltage line in the display area and configured to transmit a second initialization voltage, a first transistor in a first pixel area of the display area and connected to a pixel electrode of a first light-emitting diode emitting light of a first color and the first initialization voltage line, and a second transistor in a second pixel area adjacent to the first pixel area, the second transistor being connected to a pixel electrode of a second light-emitting diode emitting light of a second color and the second initialization voltage line.

Display panel

A memory system includes a memory controller and a memory device including a plurality of dies, each die including a plurality of blocks. A plurality of commands are configured to control the memory device in units of super blocks. During a first time interval, a first erase operation is performed on a first-first block among the first-first block to a first-Mth block, and a first program operation is performed on a second-first block to a second-Mth block, based on the first commands. During a second time interval, a second erase operation is performed on a first-second block among the first-first block to the first-Mth block, and a second program operation is performed on the first-first block and one or more blocks among the second-first block to the second-Mth block, based on the second commands.

Systems and methods for selectively controlling programming operations of a memory system comprising a plurality of super blocks

A display device may include a display panel and an input sensor. Mesh lines of the input sensor may include first mesh lines extending in a first direction and second mesh lines extending in a second direction crossing the first direction. The first mesh lines and the second mesh lines may cross each other at a plurality of cross points. In a unit region of the sensing electrode, first cutting points may be defined in the first mesh lines and the second mesh lines, and second cutting points may be defined in the first mesh lines and the second mesh lines.

Display device

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Seoul, South Korea

Youngjin Cho