Samsung Electronics Co., Ltd.

Ajou University Industry-Academic Cooperation Foundation

Youngjae Kang

Wooyoung Yang

Changseung Lee

Dongho Ahn

Kiyeon Yang

Joungeun Yoo

Bonwon Koo

Minwoo Choi

Duseop Yoon

Yongyoung Park

Hajun Sung

SangWoon Lee

Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.

Wiring material for semiconductor device, wiring for semiconductor device including the same, and semiconductor device including the wiring

A phase-change memory structure includes lower and upper electrodes spaced apart from each other, and a phase-change material stack between the lower and upper electrodes. The phase-change material stack includes a plurality of phase-change layers, at least two phase-change layers of the plurality of phase-change layers have different phase-change temperatures, and a plurality of barrier layers between the plurality of phase-change layers The at least two phase-change layers of the plurality of phase-change layers have different thicknesses.

Phase-change memory structure and phase-change memory device including the same

A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm:MAX  Formula 1In Formula 1, M, A, X, and n are as described in the specification.

Semiconductor interconnect, electrode for semiconductor device, and method of preparing multielement compound thin film

A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 &#x3bc;&#x3a9;&#xb7;cm:MAX&#x2003;&#x2003;Formula 1 In Formula 1, M, A, X, and n are as described in the specification.

Growing community of inventors

Suwon-si, South Korea

Youngjae Kang