Samsung Electronics Co., Ltd.

Youngho Lim

Hansoo Kim

Jaehun Jeong

Donghyuk Chae

Jae-Hoon Jang

Sun-Il Shim

Sunil Shim

Jaehoon Jang

Tae-young Kim

Dongku Kang

Donghun Kwak

Jinman Han

Moosung Kim

HyeongJun Kim

Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

Nonvolatile memory devices, operating methods thereof and memory systems including the same

Non-volatile memory devices, operating methods thereof and memory systems including the same

Nonvolatile memory device, operating methods thereof, and memory systems including the same. In the operating method, a ground select line of a first string connected to a bit line may be floated. An erase prohibition voltage may be applied to a ground select line of a second string connected to the bit line. An erase operation voltage may be applied to the first and second strings.

According to example embodiments of inventive concepts, a nonvolatile memory device includes a memory cell array including a plurality of memory cells; a word line driver configured to at least one of select and unselect a plurality of word lines connected with the plurality of memory cells, respectively, and to supply voltages to the plurality of word lines; and a read/write circuit configured to apply bias voltages to a plurality of bit lines connected with the plurality of memory cells. The read/write circuit may be configured to adjust levels of the bias voltages applied to the plurality of bit lines according to location of a selected word line among the plurality of word lines.

Nonvolatile memory devices and operating methods thereof

A method of operating a non-volatile memory device includes storing one or more addresses of word lines (WLs), but not the entire addresses of the WLs, into a latch, the WLs disposed between a string selection line (SSL) and a ground selection line (GSL), selecting a first WL from the latch, performing an erasing operation on memory cells associated with the string selection line (SSL), the memory cells associated with the SSL constituting a memory block, and verifying the erasing operation on memory cells associated with the selected first WL.

Nonvolatile memory device, operating method thereof and memory system including the same

A method of programming a non-volatile memory including N-bit multi-level cell (MLC) memory cells includes executing first through (N&#x2212;1)page programming operations, using an incremental step pulse programming (ISPP) method, to program first through (N&#x2212;1)data pages in the MLC memory cells, where each of the first through (N&#x2212;1)page programming operations includes an erase programming of erase cells among the MLC memory cells. The method further includes executing an Nth page programming operation, using the ISPP method, to program an Ndata page in the MLC memory cells.

Nonvolatile memory device and system, and method of programming a nonvolatile memory device

A nonvolatile memory device includes a first address decoder and a second address decoder. The first address decoder includes a plurality of transistors disposed in a first well, and the second address decoder includes a plurality of transistors disposed in a second well that is electrically isolated from the first well. The first and second address decoders are associated with first and second memory blocks, respectively. A switch circuit is configured to provide a negative voltage to one of the first address decoder and the second address decoder on the basis of block address information that specifies an address included in one of the first memory block and the second memory block. Related methods of operation are also discussed.

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Yongin-si, South Korea

Youngho Lim