Lam Research Corporation

Younghee Lee

Daniel Peter

Samantha SiamHwa Tan

Yang Pan

Da Li

Jengyi Yu

Nader Shamma

Samantha Siamhwa Tan

Alexander Kabansky

Katie Lynn Nardi

Arunima Deya Balan

Hongxiang Zhao

Ji Yeon Kim

Michelle Margarita Flores Espinosa

Process condition management facilitates the combination of dry development and etching into a single process chamber; eliminating the necessity for a post-dry development bake step during semiconductor manufacturing. Methods and apparatuses for rapidly instituting a large drop in process chamber pressure allow thermal dry development and an Oflash treatment or thermal dry development and plasma hardmask open operations to take place without wafer transfer.

Integration of dry development and etch processes for EUV patterning in a single process chamber

A method for selectively etching at least one feature in a silicon oxide region with respect to a lower oxygen containing region is provided. An etch gas comprising a metalloid or metal containing precursor and a halogen containing component is provided. The etch gas is formed into a plasma. At least one feature in the silicon oxide region is selectively etched with respect to the lower oxygen containing region, while simultaneously forming a metalloid or metal containing hardmask over the lower oxygen containing region.

Selective etch using deposition of a metalloid or metal containing hardmask

A method for selectively etching a silicon oxide region with respect to a lower oxygen silicon containing region is provided. A sacrificial mask selectively deposited on the lower oxygen silicon containing region with respect to the silicon oxide region. An atomic layer etch selectively etches the silicon oxide region with respect to the sacrificial mask on the lower oxygen silicon containing region.

Selective etch using a sacrificial mask

A method for selectively etching a first region of a structure with respect to a second region of the structure is provided. The method comprises at least one cycle. Each cycle comprises selectively depositing an inhibitor layer on the first region of the structure, providing an atomic layer deposition over the structure, wherein the atomic layer deposition selectively deposits a mask on the second region of the structure with respect to the inhibitor layer, and selectively etching the first region of the structure with respect to the mask. The selectively depositing an inhibitor layer on the first region of the structure comprises providing an inhibitor layer gas and forming the inhibitor layer gas into inhibitor layer radicals, wherein the inhibitor layer radicals selectively deposit on the first region of the structure with respect to the second region of the structure.

Deposition of self assembled monolayer for enabling selective deposition and etch

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Pleasanton, CA, United States of America

Younghee Lee