Samsung Electronics Co., Ltd.

Younggeun Park

Jooho Lee

Jaeho Lee

Seungwoo Jang

Boeun Park

Jeongil Bang

Hyosik Mun

Jungmin Park

Haeryong Kim

Younsoo Kim

Yong-hee Cho

Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.

Capacitors of semiconductor device capable of operating in high frequency operation environment

Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.

Capacitor and semiconductor device including the same

A semiconductor device includes a first electrode; a second electrode which is apart from the first electrode; and a dielectric layer between the first electrode and the second electrode. The dielectric layer may include a base material including an oxide of a base metal, the base material having a dielectric constant of about 20 to about 70, and co-dopants including a Group 3 element and a Group 5 element. The Group 3 element may include Sc, Y, B, Al, Ga, In, and/or Tl, and the Group 5 element may include V, Nb, Ta, N, P, As, Sb, and/or Bi.

Semiconductor device and semiconductor apparatus including the same

A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

Capacitor including perovskite material, semiconductor device including the capacitor, and method of manufacturing the capacitor

A capacitor structure and a semiconductor device, the capacitor structure including a lower electrode on a substrate; a seed layer on the lower electrode; a dielectric layer on the seed layer; and an upper electrode on the dielectric layer, wherein the dielectric layer includes a ternary metal oxide having a chemical formula of ABO, in which each of A and B is independently a metal, and the seed layer includes a ternary metal oxide containing the same elements as that of the dielectric layer, the ternary metal oxide having a chemical formula of ABO, in which each of A and B is the same metal as A and B of the ternary metal oxide having a chemical formula of ABO, 0&#x3c;x&#x3c;3, and x is a real number.

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Suwon-si, South Korea

Younggeun Park